FM120-M
THRU
BC817-40WT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
NPN Silicon
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss,
material of product
•
We declare that the
high efficiency.
compliance with RoHS requirements.
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MAXIMUM RATINGS
•
RoHS product for packing code suffix "G"
Rating
Symbol
Value
Unit
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–323
0.040(1.0)
Mechanical data
Collector–Emitter Voltage
V
CEO
45
V
V
Collector Current — Continuous
Method 2026
I
C
500
mAdc
ina
Symbol
Max
Unit
R
θJA
556
°C/W
15
mW
mW/°C
50
°C/W
35
°C
50
16
60
42
60
12
20
R
θJA
14
T
J
, T
stg
20
13
30
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
THERMAL CHARACTERISTICS
•
Weight : Approximated 0.011 gram
Characteristic
ry
1
BASE
•
Epoxy : UL94-V0
Voltage
Collector–Base
rated flame retardant
V
CBO
50
•
Case : Molded plastic, SOD-123H
V
5.0
Emitter–Base Voltage
EBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
3
0.024(0.6)
COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
V
Dimensions in inches and (millimeters)
2
EMITTER
Thermal Resistance, Junction
For capacitive load, derate current by 20%
to Ambient
Total Device Dissipation
RATINGS
Alumina Substrate, (2) T
A
= 25°C
Marking Code
im
MAXIMUM RATINGS AND
(1)
Total Device Dissipation FR– 5 Board,
ELECTRICAL
D
P
CHARACTERISTICS
T
A
25°C
Ratings at 25℃
=
ambient temperature unless otherwise specified.
225
mW
Derate above 25°C
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
P
H
SYMBOL
FM120-M
D
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
300
14
2.4
40
18
80
56
80
1.0
Max
30
40
120
—
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Derate above 25°C
Maximum Recurrent Peak Reverse Voltage
V
RRM
Thermal Resistance, Junction to Ambient
Maximum RMS Voltage
V
RMS
Junction and Storage Temperature
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified Current
25°C unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
(T
A
=
I
O
I
FSM
Pr
el
417
21
28
–55 to +150
30
40
Amps
Peak Forward Surge Current
Characteristic
sine-wave
8.3 ms single half
superimposed on rated load (JEDEC method)
Symbol
Min
Typ
Unit
℃/W
PF
℃
℃
Amps
OFF
Resistance (Note 2)
Typical Thermal
CHARACTERISTICS
Operating Temperature
mA)
(I = –10
Range
Storage Temperature Range
C
R
ΘJA
C
J
T
J
TSTG
Typical Junction Capacitance (Note 1)
Collector–Emitter Breakdown Voltage
V
(BR)CEO
-55 to +125
45
—
V
-55 to +150
Collector–Emitter Breakdown Voltage
(V
EB
=
CHARACTERISTICS
0, I
C
= –10
µA)
-
65
to +175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
(BR)CES
50
—
—
V
Maximum Forward Voltage at 1.0A DC
Voltage
Emitter–Base Breakdown
Rated DC Blocking Voltage
V
F
I
R
Maximum Average
–1.0
µA)
Current at @T A=25℃
(I =
Reverse
E
V
(BR)EBO
0.50
5.0
0.70
—
0.5
—
10
0.85
V
0.9
0.92
Volts
Collector Cutoff Current
(V
CB
= 20 V)
@T A=125℃
mAmp
I
CBO
—
—
—
—
NOTES:
100
5.0
nA
µA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
(V
CB
= 20 V, T
A
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
WILLAS ELECTRONIC CORP.
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
