WILLAS
General Purpose Transistors
BC817-xxLT1
NPN Silicon
•
We declare that the material of product compliance with RoHS requirements.
•
product for packing code suffix "G"
RoHS
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
SOT–23
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
ina
Symbol
P
D
Max
Unit
R
θJA
P
D
225
1.8
556
300
2.4
417
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
–55 to +150
Symbol
Min
Typ
Max
V
(BR)CEO
45
—
—
V
(BR)CES
50
—
—
V
(BR)EBO
ry
3
COLLECTOR
1
BASE
2
EMITTER
V
Junction and Storage Temperature
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
5.0
—
—
V
V
V
Pr
el
I
CBO
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
im
—
—
—
—
100
5.0
nA
µA
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
