WILLAS
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
TRANSISTOR (PNP)
optimize board space.
FEATURES
power loss, high efficiency.
•
Low
•
High current capability, low forward voltage drop.
NPN Complement to BC868
•
High surge capability.
Low
Guardring for overvoltage protection.
Voltage
•
High Current
•
Ultra high-speed switching.
•
Silicon epitaxial
is available
Pb-Free package
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
•
RoHS
free product for packing code
Halogen
product for packing code suffix "G"
suffix “H”
Halogen free product for packing code suffix "H"
FM120-M
BC86
THRU
FM1200-M
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
MAXIMUM RATINGS
rated flame
unless otherwise noted)
•
Epoxy : UL94-V0
(T
a
=25℃
retardant
•
Collector-Base Voltage
V
CBO
Terminals :Plated terminals, solderable per MIL-STD-750
V
CEO
Mechanical data
0.040(1.0)
0.024(0.6)
P
C
R
θJA
Collector Power Dissipation
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
T
j
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature
T
stg
For capacitive load, derate current by 20%
RATINGS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Thermal Resistance From Junction To Ambient
250
150
-55~+150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Marking Code
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
12
13
14
15
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Parameter
Maximum DC Blocking Voltage
ina
-1
A
500
mW
℃
℃
16
60
42
Min
60
-32
1.0
-20
18
80
56
Typ
80
10
100
70
Max
100
115
150
105
Unit
150
V
120
200
140
200
•
Polarity : Indicated by cathode band
Emitter-Base Voltage
V
EBO
•
Mounting Position : Any
I
C
•
Weight
Collector Current
: Approximated 0.011 gram
Collector-Emitter Voltage
Method 2026
V
RRM
20
V
RMS
Symbol
V
DC
V
(BR)CBO
I
O
V
(BR)CEO
14
Test
21
28
conditions
20
=-100µA,I =0
40
30
I
C
E
Collector-base breakdown voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
V
(BR)EBO
Emitter-base breakdown voltage
I
FSM
superimposed on rated load (JEDEC method)
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-25V,I
E
=0
ry
-32
-5
V
-20
V
V
℃/W
30
40
50
35
50
•
Case : Molded plastic, SOD-123H
Symbol
Parameter
,
Value
0.031(0.8) Typ.
Unit
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
V
V
-0.1
-0.1
375
0.85
-0.5
-5
30
40
120
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
DC current gain
CHARACTERISTICS
R
ΘJA
I
CBO
I
C
J
EBO
µA
µA
V
EB
=-5V,I
C
=0
-55 to
I
C
=-5mA
V
CE
=-10V,
+125
h
T
J
FE(1)
TSTG
h
FE(2)
50
-
65
to +175
-55 to +150
V
CE
=-1V, I
C
=-0.5A
V =-1V, I =-1A
I
C
=-1A,I
B
=-0.1A
0.50
V
CE
=-1V, I
C
=-1A
V
CE
=-10V, I
C
=-5mA
V
CE
=-5V,I
C
=-10mA, f=100MHz
0.70
100
60
FE(3)
CE
C
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
h
Collector-emitter saturation voltage
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
V
CE(sat)
V
F
V
BE
f
T
I
R
V
0.9
V
V
MHz
0.92
0.5
10
Base -emitter
Voltage
Rated DC Blocking
voltage
-1
-0.62
@T A=125℃
NOTES:
Transition
frequency
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
40
2- Thermal Resistance From Junction to
CLASSIFICATION OF
h
FE(2)
Ambient
RANK
RANGE
MARKING
BC869
100–375
CEC
BC869-16
100–250
CGC
BC869-25
160–375
CHC
2012-06
WILLAS ELECTRONIC CORP
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
