FM120-M
BCW66GLT1
THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Produc
Features
NPN Silicon
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse
the material of
and thermal resistance.
We declare that
leakage current
product
•
Low profile surface mounted application in order to
compliance with RoHS requirements.
optimize board
is available
Pb-Free package
space.
•
Low power
for packing code suffix
RoHS product
loss, high efficiency.
”G”
•
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
•
High surge capability.
•
Guardring for
AND ORDERING INFORMATION
DEVICE MARKING
overvoltage protection.
•
Ultra high-speed switching.
Device
Marking
Shipping
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
BCW66GLT1
EG
3000/Tape&Reel
MIL-STD-19500 /228
MAXIMUM
product for packing code suffix "G"
•
RoHS
RATINGS
Halogen free product for packing code suffix "H"
Rating
Symbol
Value
Unit
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT–23
0.071(1.8)
0.056(1.4)
3
COLLECTOR
Mechanical data
ry
0.031(0.8) Typ.
Collector–Emitter Voltage
V
CEO
45
Vdc
•
Epoxy : UL94-V0 rated flame retardant
Collector–Base Voltage
V
CBO
75
Vdc
•
Case : Molded plastic, SOD-123H
,
Emitter–Base Voltage
terminals,
V
EBO
Vdc
•
Terminals :Plated
solderable per
7.0
MIL-STD-750
1
BASE
2
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
EMITTER
Method 2026
Collector Current — Continuous
I
C
800
mAdc
Pr
el
20
Derate above 25°C
1.8
mW/°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
Thermal Resistance, Junction to Ambient
phase half wave, 60Hz, resistive of inductive load.
R
θJA
556
°C/W
Total Device Dissipation
For capacitive load, derate current by 20%
P
D
300
mW
Alumina Substrate, (2) T
A
= 25°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Derate above 25°C
2.4
mW/°C
Marking Code
12
13
14
15
16
18
10
115
120
Thermal Resistance, Junction to Ambient
R
θJA
20
417
°C/W
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Junction and Storage Temperature
T
J
, T
stg
–55 to +150
28
°C
35
14
21
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
im
30
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
MAXIMUM RATINGS AND
P
D
225
mW
ELECTRICAL CHARACTERISTICS
ina
Symbol
Max
Unit
40
50
•
Polarity : Indicated by cathode band
THERMAL CHARACTERISTICS
•
Mounting Position : Any
Characteristic
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
I
O
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
V
unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C
DC
60
80
1.0
30
40
120
100
150
200
Characteristic
Min
Typ
Max
Unit
superimposed on rated load (JEDEC method)
OFF CHARACTERISTICS
Typical
Collector–Emitter Breakdown Voltage
Thermal Resistance (Note 2)
Typical
(I
C
= 10mAdc, I
B
= 0 )
(Note 1)
Junction Capacitance
Operating Temperature Range
Storage Temperature Range
R
ΘJA
V
(BR)CEO
C
J
T
J
45
-55 to +125
—
—
Vdc
-55 to +150
Collector–Emitter Breakdown Voltage
—
—
-
65
to +175
Vdc
(I
C
= 10
µAdc,
V
EB
= 0 )
V
(BR)CES
TSTG
75
Emitter–Base Breakdown Voltage
CHARACTERISTICS
Maximum
= 10
µAdc,
I = 0)
1.0A DC
(I
Forward Voltage at
E
C
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
(BR)EBO
F
V
@T A=125℃
5.0
0.50
—
—
0.70
0.5
10
Vdc
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Collector Cutoff Current
(V
CE
= 45 Vdc, I
E
= 0 )
I
CES
I
R
—
—
I
EBO
—
—
20
20
nAdc
µAdc
NOTES:
CE
= 45 Vdc, I
E
= 0 ) (T
A
=150°C)
(V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
—
—
—
—
20
100
nAdc
nAdc
(V
EB
= 7.0 Vdc, I
C
= 0) (3)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Added I
EBO
test to guarantee quality for oxide defects
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
