FM120-M
BCW68GLT1
THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Produ
PNP
better reverse leakage current and thermal resistance.
Silicon
•
•
RoHS product for packing code suffix "G",
optimize board space.
•
Batch process design, excellent power dissipation offers
•
Low profile surface mounted application in order to
.
SOD-123H
Features
Package outline
Halogen
power loss, high
packing code suffix "H"
•
Low
free product for
efficiency.
•
High
0.008g
Weight :
current capability, low forward voltage drop.
•
High surge capability.
Device
Marking
Shipping
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
3000/Tape&Reel
BCW68GLT1
DG
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
ORDERING INFORMATION
protection.
•
Guardring for overvoltage
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS
Mechanical data
SOT–23
0.040(1.0)
0.024(0.6)
Rating
Symbol
Unit
•
Epoxy : UL94-V0 rated flame retardant
Value
– 45
Vdc
Collector–Emitter Voltage
SOD-123H
V
CEO
•
Case : Molded plastic,
,
Collector–Base
:Plated terminals,
V
CBO
– 60
Vdc
•
Terminals
Voltage
solderable per MIL-STD-750
Method
Emitter–Base Voltage
2026
V
EBO
•
Polarity : Indicated by cathode band
Collector Current — Continuous
I
C
•
Mounting Position : Any
– 5.0
– 800
Vdc
mAdc
0.031(0.8) Typ.
3
0.031(0.8) Typ.
COLLECTOR
1
Dimensions in inches and (millimeters)
BASE
2
EMITTER
•
Weight : Approximated 0.011
THERMAL CHARACTERISTICS
gram
Characteristic
Symbol
Max
Unit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Total Device Dissipation FR– 5 Board, (1)
Ratings at 25℃ ambient temperature unless otherwise specified.
P
D
225
mW
T
A
= 25°C
Single phase half wave, 60Hz, resistive of inductive load.
1.8
mW/°C
Derate above 25°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Total Device Dissipation
300
P
D
12
Marking Code
Substrate, (2) T = 25°C
13
14
mW
15
16
18
10
115
120
Alumina
A
2.4
mW/°C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Derate above 25°C
21
28
°C/W
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
R
θJA
14
Thermal Resistance, Junction to Ambient
417
Maximum DC Blocking Voltage
20
30
60
80
100
150
200
Junction and Storage Temperature
–55 to +150
40
°C
50
V
DC
T
J
, T
stg
Maximum Average Forward Rectified Current
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
O
I
FSM
1.0
30
Max
40
120
—
Unit
OFF CHARACTERISTICS
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
V
(BR)CEO
-55 to +125
V
(BR)CES
V
(BR)EBO
Vdc
Typical Junction Capacitance (Note 1)
Voltage (I
C
= –10 mAdc, I
B
= 0 )
C
J
Collector–Emitter Breakdown
TSTG
– 45
– 60
– 5.0
—
—
-55 to +150
T
J
Collector–Emitter Breakdown Voltage (I
C
= –10
µAdc,
V
EB
= 0 )
Emitter–Base Breakdown Voltage (I
E
= –10
µAdc,
I
C
= 0)
Collector Cutoff Current
CHARACTERISTICS
V
F
@T A=125℃
—
Vdc
-
65
to +175
—
—
Vdc
I
CES
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.50
Maximum Forward
Vdc, I
E
=
at
)
(V
CE
= –45
Voltage
0
1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
—
—
0.70
—
(V
CE
= –45 Vdc, I
B
= 0 , T
A
= 150°C)
I
R
—
—
Emitter Cutoff Current (V
EB
= – 4.0 Vdc, I
C
= 0)
I
EBO
—
– 20
0.5
– 10
10
– 20
0.85
nAdc
0.9
0.92
µAdc
nAdc
NOTES:
5 = 1.0 x 0.75 x 0.062 in.
1. FR–
1- Measured at 1 MHZ
x
and applied reverse voltage of 4.0 VDC.
2. Alumina = 0.4 0.3 x 0.024 in. 99.5% alumina.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
