SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low
(PNP)
TRANSISTOR
profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
FEATURES
current capability, low forward voltage drop.
•
High
High surge capability.
NPN
•
Complements to BCX54,BCX55,BCX56
•
Guardring for overvoltage protection.
Low Voltage
•
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
High
•
Current
•
Lead-free parts meet environmental standards of
Pb-Free package is available
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
”G”
RoHS product for packing code suffix
Halogen free product for packing code suffix "H"
WILLAS
BCX51
THRU
FM1200-M
FM120-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. COLLECTOR
3. EMITTER
Halogen free product for packing code suffix “H”
Mechanical data
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
im
12
20
13
30
MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD
CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL
BCX53:AH, BCX53-10:AK, BCX53-16:AL
Ratings at 25℃ ambient temperature unless otherwise specified.
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
V
RRM
V
DC
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
20
30
Driver
Polarity : Indicated by cathode band
•
Stages of Audio Amplifiers
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
21
14
Maximum RMS Voltage
V
RMS
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Pr
el
Parameter
Maximum Average Forward Rectified Current
I
O
BCX51
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Collector-Base Voltage
V
CBO
superimposed on rated load (JEDEC method)
ry
Value
-45
V
Unit
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
APPLICATIONS
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Medium Power
Method 2026
General Purposes
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
BCX53
R
ΘJA
C
J
T
J
-100
-45
-55 to +125
-80
0.50
0.70
BCX51
BCX53
-55 to +150
V
CEO
Collector-Emitter Voltage
CHARACTERISTICS
Emitter-Base Voltage
V
-
65
to +175
TSTG
Maximum Forward Voltage at 1.0A DC
V
EBO
I
C
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
-5
V
Collector Power
P
C
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
Collector Current
V
F
I
R
-1
A
0.85
0.9
0.92
0.5
10
Dissipation
@T A=125℃
500
250
150
-55~+150
mW
℃/W
℃
℃
NOTES:
R
θJA
Thermal Resistance From Junction To Ambient
Junction Temperature
T
j
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-
T
stg
Thermal Resistance From Junction to Ambient
Storage Temperature
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
