SOT-89 Plastic-Encapsulate Transistors
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
FM120-M
BCX55
THRU
BCX56
FM1200-M
Pb Free Produ
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
TRANSISTOR (NPN)
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
FEATURES
•
Silicon epitaxial planar chip, metal silicon junction.
PNP
Lead-free parts meet
BCX51,BCX52,BCX53
•
Complements to
environmental standards of
MIL-STD-19500 /228
Low Voltage
•
RoHS product for packing code suffix "G"
High
Halogen free product for packing code suffix "H"
Current
0.146(3.7)
0.130(3.3)
SOT-89
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. COLLECTOR
3. EMITTER
Mechanical data
Pb-Free package is available
•
Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
•
Case : Molded plastic, SOD-123H
Halogen free product for packing code suffix “H”
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
,
0.031(0.8) Typ.
0.031(0.8) Typ.
APPLICATIONS
: Indicated by cathode band
•
Polarity
Driver Stages of Audio Amplifiers
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Method 2026
Dimensions in inches and (millimeters)
MARKING: BCX55:BE, BCX55-10:BG, BCX55-16BM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BCX56:BH, BCX56-10:BK, BCX56-16:BL
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
DC
12
20
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
14
Maximum RMS Voltage
V
RMS
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Maximum Average Forward Rectified Current
I
O
BCX55
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Collector-Base Voltage
V
CBO
superimposed on rated load (JEDEC method)
Symbol
Parameter
Value
60
Unit
V
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
BCX56
ΘJA
R
BCX55
T
J
BCX56
C
J
100
60
-55 to +125
80
0.50
1
-55 to +150
V
CEO
Collector-Emitter Voltage
TSTG
V
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
EBO
I
C
P
C
T
CHARACTERISTICS
Emitter-Base Voltage
5
V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
Collector Current
A
0.70
mW
℃/W
℃
℃
0.85
0.5
10
0.9
0.92
Collector Power Dissipation
NOTES:
R
θJA
@T A=125℃
I
R
500
250
150
-55~+150
Thermal Resistance From Junction To Ambient
Junction Temperature
j
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
T
stg
Storage Temperature
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
