WILLAS
Power MOSFET
130
BARRIER RECTIFIERS
Volts
1.0A SURFACE MOUNT SCHOTTKY
mAmps, 50
-20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
surface mount MOSFETs reduce power loss
These miniature
•
Guardring for overvoltage protection.
device ideal for use in small power
conserve energy, making this
•
Ultra high-speed
circuitry. Typical applications are dc–dc converters, load
management
switching.
•
Silicon epitaxial planar
management in
junction.
and battery–powered
switching, power
chip, metal silicon
portable
•
Lead-free parts meet environmental standards of
products such as
MIL-STD-19500 /228
computers, printers, cellular and cordless telephones.
•
Energy
for packing
•
RoHS product
Efficient
code suffix "G"
Halogen free product for packing code suffix "H"
Package Saves Board Space
•
Miniature SOT–323 Surface Mount
FM120-M
THRU
BSS84WT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
P–Channel SOT–323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
3
0.056(1.4)
1
2
0.040(1.0)
SOT –323
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
suffix ”G”
RoHS product for packing code
•
Case : Molded
free product for packing code suffix “H”
Halogen
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Mechanical data
is available
•
Pb-Free package
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
THERMAL CHARACTERISTICS
•
Mounting Position : Any
Characteristic
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Marking Diagram
Symbol
Max
Unit
225
mW
1.8
mW/°C
CHARACTERISTICS
556
°C/W
Total Device Dissipation FR–5 Board
P
D
(Note 3.) T
A
= 25°C
MAXIMUM RATINGS AND ELECTRICAL
Derate above 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal Resistance, Junction
inductive load.
R
θJA
Single phase half wave, 60Hz, resistive of
to Ambient
PD
P
D
300
mW
Alumina
RATINGS
Substrate,(Note 4.) TA = 25°C
mW/°C
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
FM120-M
H FM130-MH
FM140-MH
UNIT
Derate above 25°C
2.4
PD = Device Code
Marking Code
12
13
14
15
16
18
10
115
120
M = Month Code
Thermal Resistance,
Voltage
to Ambient
V
RRM
R
θJA
20
Junction
417
°C/W
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse
Volts
Junction and Storage Temperature
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
For capacitive load, derate current by 20%
Total Device Dissipation
M
V
RMS
T
J,
T
stg
14
V
DC
I
O
I
FSM
R
ΘJA
20
–o 5
21
5 to
+150
30
28
°C
40
35
50
42
60
56
80
70
100
105
150
140
200
Volts
Volts
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.0
ORDERING INFORMATION
Device
Package
Shipping
30
Amps
℃/W
PF
℃
℃
Typical Thermal Resistance (Note 2)
C
J
-55
MAXIMUM RATINGS
(T
J
= 25
°
C unless
T
J
otherwise noted)
to +125
Operating Temperature Range
Typical Junction Capacitance (Note 1)
Storage Temperature Range
TSTG
BSS84WT1
40
120
SOT-323
3000/Tape&Reel
-55 to +150
-
65
to +175
Rating
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
Drain–to–Source Voltage
Symbol
Value
Unit
3 Drain
Maximum Average Reverse Current at @T A=25℃
Gate–to–Source Voltage – Continuous
Drain Current
@T A=125℃
– Continuous @ T
A
= 25°C
– Pulsed Drain Current (t
p
≤
10
µs)
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
SYMBOL
V
DSS
50
V
dc
Volts
0.9
0.92
V
F
0.50
0.70
0.85
I
R
V
GS
I
D
±
20
130
520
225
V
dc
mA
0.5
10
1
Gate
-
mAmps
NOTES:
I
DM
P
D
T
J
, T
stg
R
θJA
T
L
1- Measured at 1
Total Power Dissipation
voltage
= 25°C
MHZ and applied reverse
@ T
A
of 4.0 VDC.
mW
°C
°C/W
°C
2
Source
2- Thermal Resistance From
and Storage Temperature
Operating
Junction to Ambient
Range
– 55 to
150
556
260
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
