SOT-23 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
FM120-M
PACKAGE
C945
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
TRANSISTOR (NPN)
space.
optimize board
•
Low power loss, high efficiency.
FEATURE
High current capability, low forward voltage drop.
•
Excellent h
FE
capability.
•
High surge
Linearity
•
noise
Low
Guardring for overvoltage protection.
•
Ultra high-speed switching.
Pb-Free package is available
silicon junction.
•
Silicon epitaxial planar chip, metal
•
Lead-free parts meet environmental standards
RoHS product for packing code suffix ”G”
of
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. EMITTER
MIL-STD-19500 /228
•
RoHS product
product for packing code suffix
Halogen free
for packing code suffix "G"
Halogen free product for packing code suffix "H"
“H”
3. COLLECTOR
Mechanical data
MARKING:CR
•
Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS
plastic, SOD-123H
otherwise noted)
•
Case : Molded
(T
a
=25℃ unless
,
Symbol
•
Terminals :Plated terminals, solderable per MIL-STD-750
Value
Parameter
V
CBO
V
CEO
V
EBO
I
C
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Unit
Dimensions in inches and (millimeters)
Collector-Base Voltage
•
Polarity : Indicated by cathode band
Collector-Emitter
Any
•
Mounting Position :
Voltage
•
Weight : Approximated 0.011 gram
Emitter-Base Voltage
Collector Current -Continuous
60
50
5
150
V
V
V
mA
mW
℃
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
200
150
-55-150
13
30
P
C
Ratings at
Collector Power Dissipation
25℃ ambient temperature unless otherwise specified.
Junction Temperature
T
J
Single phase half wave, 60Hz, resistive of inductive load.
T
stg
For capacitive load, derate current by 20%
Storage Temperature
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Maximum Recurrent Peak Reverse Voltage
Marking Code
V
RRM
V
DC
I
O
12
20
14
40
40
15
50
35
50
16
60
18
80
10
100
115
150
120
200
140
200
Maximum RMS Voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
(Note 2)
Typical Thermal Resistance
Typical Junction Capacitance
Collector cut-off current
(Note 1)
Maximum DC Blocking Voltage
Parameter
V
RMS
Symbol
14
21
Test conditions
28
Collector-emitter breakdown voltage
Maximum Average Forward Rectified Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
=100uA, I
E
=0
I
C
=1mA , I
B
=0
I
E
=0.1mA, I
C
=0
20
30
Min
42
60
50
5
60
Typ
56
1.0
30
40
120
80
Max
70
100
Unit
105
V
V
V
150
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
I
CBO
ΘJA
R
I
CER
C
J
I
EBO
TSTG
h
FE(1)
h
FE(2)
T
J
V
CB
=60V, I
E
=0
V
CE
=55V,R=10MΩ
-55 to +125
0.1
Emitter cut-off current
Storage Temperature Range
DC current gain
Operating Temperature Range
-
65
to +175
0.1
uA
uA
uA
-55 to +150
V
EB
=5V ,
V
CE
=6 V ,
V
CE
=6 V ,
I
C
=0
I
C
=1mA
I
C
=0.1mA
0.50
0.1
400
0.85
130
0.70
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Collector-emitter saturation voltage
A=25℃
V
CE(sat)
Maximum Average Reverse Current at @T
Rated DC Blocking Voltage
Base-emitter saturation voltage
@T A=125℃
BE(sat)
V
Maximum Forward Voltage at 1.0A DC
V
F
I
R
40
0.9
0.92
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V,I
C
=10mA,f =30 MHz
V
CB
=10V,I
E
=0,f=1MH
Z
V
CE
=
6V,I
C
=0.1
mA
R
g
=10
kΩ
,f=1k
MH
Z
150
0.5
10
0.3
1
V
V
MHz
Transition frequency
NOTES:
2- Thermal Resistance From Junction to Ambient
f
T
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
ob
Collector output capacitance
3.0
4
10
pF
dB
Noise figure
NF
CLASSIFICATION OF h
FE(1)
Rank
Range
L
130-200
H
200-400
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
