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DAN202U 参数 Datasheet PDF下载

DAN202U图片预览
型号: DAN202U
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 323塑封装二极管 [SOT-323 Plastic-Encapsulate Diodes]
分类和应用: 二极管
文件页数/大小: 3 页 / 382 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号DAN202U的Datasheet PDF文件第2页浏览型号DAN202U的Datasheet PDF文件第3页  
WILLAS
SOT-323 Plastic-Encapsulate Diodes
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
DAN202U
FM1200-M
Pb Free Product
Package outline
SOT-323
SOD-123H
Batch process design, excellent power dissipation offers
SWITCHING DIODE
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
FEATURES:
Four types of packaging are available
Low power loss, high efficiency.
High current
High speed
capability, low forward voltage drop.
High surge capability.
Suitable for
for overvoltage protection.
Guardring
high packing density layout
High reliability
switching.
Ultra high-speed
Silicon
package is
chip, metal
Pb-Free
epitaxial planar
available
silicon junction.
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
RoHS product
product for packing code suffix “H”
Halogen free
for packing code suffix "G"
Moisture Sensitivity Level 1
Mechanical data
Halogen free product for packing code suffix "H"
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
0.040(1.0)
0.024(0.6)
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
MARKING:N
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum Ratings and
RATINGS AND ELECTRICAL
Single Diode @Ta=25
MAXIMUM
Electrical Characteristics,
CHARACTERISTICS
Ratings at 25℃
Parameter
ambient temperature unless otherwise specified.
Symbol
Single phase half wave, 60Hz, resistive of inductive load.
Peak reverse voltage
V
RM
For capacitive load, derate current by 20%
Limit
80
Unit
 
V
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
mA
120
200
140
200
DC reverse voltage
RATINGS
Marking Code
(peak)
Maximum
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
R
80
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNI
V
RRM
V
RMS
V
P
D
DC
I
T
j
O
forward current
I
FM
I
O
Average forward current
12
20
14
20
13
30
21
30
14
40
28
40
15
300
100
35
50
mA
105
mW
150
150
Volts
Volts
Power
DC Blocking Voltage
Maximum
dissipation
 
200
50
150
-55~+150
Volts
Maximum Average Forward Rectified Current
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage temperature
superimposed on rated load (JEDEC method)
Amp
 
FSM
I
T
stg
 
Amp
 
Typical Thermal Resistance (Note 2)
R
ΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
C
J
T
J
 
 
Max
-55 to +150
℃/W
PF
Parameter
TSTG
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
-55 to +125
Test
conditions
 
-
65
to +175
Min
80
Unit
V
 
Reverse breakdown voltage
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
I
R
= 100μA
V
R
=70V
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
Maximum Average Reverse Current at @T A=25℃
Reverse voltage leakage current
Forward voltage
V
F
I
R
0.50
0.70
0.5
10
0.85
0.1
μA
V
pF
ns
0.9
0.92
 
Volt
@T A=125℃
mAm
NOTES:
I
F
=100mA
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
1.2
3.5
4
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
2- Thermal Resistance From Junction to Ambient
Diode capacitance
Reverse recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.