WILLAS
Diodes
SOT-723 Plastic-Encapsulate
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
optimize board
SWITCHING DIODE
space.
•
Low power loss, high efficiency.
•
High
FEATURES
current capability, low forward voltage drop.
•
High surge capability.
Ultra
•
Small Surface Mounting Type
Guardring for overvoltage protection.
Ultra
•
High Speed Switching Applications
Ultra high-speed switching.
High
•
Silicon epitaxial planar chip, metal silicon junction.
Reliability
•
Lead-free parts meet environmental standards of
Pb-Free package is available
MIL-STD-19500 /228
RoHS product
packing code suffix ”G”
•
RoHS product for
for packing code suffix "G"
Halogen free product for packing code suffix "H"
Halogen free product for packing code suffix “H”
FM120-M
DAN222M
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
SOT-723
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
MARKING: N
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Moisture Sensitivity Level 1
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
Value
80
56
100
14
40
28
40
15
4
50
50
12
14
13
21
30
20
35
150
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
•
Polarity : Indicated by cathode band
Symbol
Parameter
•
Mounting Position : Any
•
Peak Reverse Voltage
V
RRM
Weight : Approximated 0.011 gram
V
RWM
Ratings at 25℃ ambient temperature unless otherwise specified.
RMS Reverse Voltage
V
R(RMS)
Single phase half wave, 60Hz, resistive of inductive load.
I
O
For capacitive load,
Continuous Forward Current
derate current by 20%
Dimensions in inches and (millimeters)
Unit
V
V
V
mA
Working
RATINGS AND ELECTRICAL CHARACTERISTICS
80
MAXIMUM
Peak Reverse Voltage
Marking Code
Pr
el
I
FM
RATINGS
Peak Forward Current
im
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
mA
300
Non-Repetitive Peak Forward Surge Current (t=1µs)
I
FSM
20
30
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
Power
P
D
Maximum DC Blocking Voltage
16
60
60
18
80
A
100
℃/W
℃
10
115
150
105
150
120
200
140
200
Vo
Dissipation
V
RMS
V
DC
I
O
42
1.0
30
40
120
Maximum Average Forward Rectified Current
R
θJA
T
j
Thermal Resistance from Junction to Ambient
I
FSM
833
150
56
mW
70
80
100
Vo
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
Junction Temperature
ELECTRICAL
Capacitance (Note 1)
Typical Junction
CHARACTERISTICS(T
a
=25
℃
J
C
unless otherwise specified)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Storage Temperature
superimposed on rated load (JEDEC method)
T
stg
-55~+150
R
ΘJA
T
J
℃
Am
-55 to +150
℃
P
-55 to +125
Parameter
Symbol
TSTG
Test conditions
Typ
Min
to +175
-
65
80
Max
Unit
V
℃
℃
Reverse voltage
V
R
Reverse current
Voltage at 1.0A DC
I
R
Maximum Forward
= 70V
V
F
Forward voltage
NOTES:
CHARACTERISTICS
= 100uA
I
R
V
(BR)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.50
0.70
0.5
10
0.85
0.1
µA
0.9
V
pF
ns
0.92
Vo
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
=
R
100mA
I
F
V
F
@T A=125℃
1.2
3.5
4
mA
Total capacitance
= 6V,f 1MHz
=
V
R
C
tot
1- Measured at 1 MHZ and
t
rr
I
Reverse recovery time
applied reverse voltage of 4.0 VDC.
F
= I
R
=5mA, V
R
=6V,R
L
=50Ω
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
