FM120-M
DS520-30WB
THRU
WBFBP-02C Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
0.146(3.7)
WBFBP-02C
0.130(3.3)
SCHOTTKY BARRIER DIODE
application in order to
•
Low profile surface mounted
better reverse leakage current and thermal resistance.
optimize board space.
•
Low power loss, high efficiency.
DESCRIPTION
•
High current capability, low forward voltage drop.
Silicon Epitaxial Planar
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra
FEATURES
high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Small
Lead-free
Mounting
environmental standards of
•
Surface
parts meet
Type
MIL-STD-19500 /228
Low Reverse Current and Low Forward Voltage
•
RoHS product for packing code suffix "G"
High Reliability
product for packing code suffix "H"
Halogen free
(1.0×0.6×0.5)
unit: mm
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy
APPLICATION
: UL94-V0 rated flame retardant
•
Case : Molded
for Detection
High Speed Switching
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
For Portable Equipment:(i.e. Mobile Phone,MP3, MD,CD-ROM,
Method 2026
DVD-ROM, Note Book PC, etc.)
•
Polarity : Indicated by cathode band
•
package is available
Pb-Free
Mounting Position : Any
•
Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
RoHS product for packing code suffix ”G”
RATINGS
Marking Code
im
12
20
14
13
30
21
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
MARKING:
E
load, derate current by 20%
For capacitive
Halogen free
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
product for packing code suffix “H”
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
ina
14
40
28
15
50
35
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
I
O
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Pr
el
V
RRM
V
RMS
ry
Value
Dimensions in inches and (millimeters)
V
V
Maximum DC Blocking Voltage
20
30
40
50
V
DC
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Maximum Average Forward Rectified Current
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
Symbol
I
FSM
Unit
DC reverse voltage
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
V
R
I
O
R
ΘJA
C
J
T
J
30
100
500
0.50
V
mA
mA
Mean rectifying current
-55 to +125
℃
-
65
to +175
-55 to +150
Peak forward surge current
Junction
Forward Voltage at 1.0A DC
Maximum
temperature
Rated DC Blocking Voltage
Storage temperature
NOTES:
I
FSM
TSTG
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
T
V
F
j
I
R
150
0.70
0.85
0.5
10
℃
0.9
0.92
V
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
T
stg
-55~+150
℃
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Electrical Ratings @Ta=25℃
Parameter
Symbol
V
F
I
R
Min
Typ
Max
0.45
0.5
Unit
V
μA
Conditions
I
F
=10mA
V
R
=10V
Forward voltage
Reverse current
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
