FM120-M
DTA114TE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
High current capability,
Pb-Free
•
package is available
low forward voltage drop.
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen
•
free product for packing code suffix “H”
Ultra high-speed switching.
•
Silicon
94 V-0 flammability rating
Epoxy meets UL
epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Moisure Sensitivity Level 1
MIL-STD-19500 /228
Built-in bias resistors enable the configuration of an inverter circuit
•
RoHS product for packing code suffix "G"
without connecting external input resistors (see equivalent circuit)
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
Features
•
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
The bias resistors consist of thin-film resistors with complete
Mechanical data
isolation to allow negative biasing of the input. They also have the
•
of almost completely eliminating parasitic effects
advantage
Epoxy : UL94-V0 rated flame retardant
Only the
•
Case
conditions need to be set for operation, making
on/off
: Molded plastic, SOD-123H
device design easy
:Plated terminals, solderable per MIL-STD-750 ,
•
Terminals
Method 2026
.035(0.90)
.028(0.70)
•
•
0.056(1.4)
.067(1.70)
.059(1.50)
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
Collector-Base Voltage
V
CBO
-50
MAXIMUM RATINGS AND ELECTRICAL
Collector-Emitter Voltage
V
CEO
-50
Emitter-Base voltage
V
unless otherwise specified.
-5
Ratings at 25℃ ambient temperature
EBO
Collector
Single phase half wave, 60Hz, resistive of inductive load.
Current-Continuous
I
C
-100
Collector
For capacitive load, derate current by
P
20%
Dissipation
C
V
CHARACTERISTICS
V
V
mA
mW
150
Junction Temperature Range
RATINGS
Storage
Marking Code
Range
Temperature
Maximum RMS Voltage
Maximum DC Blocking Voltage
Electrical Characteristics
T
J
T
STG
-55~150
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL
-55~150
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
Typ
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
18
.008(0.20)
80
.069(1.75)
.057(1.45)
10
100
70
100
Value
Unit
.004(0.10)MIN.
•
Polarity : Indicated by cathode band
•
Mounting Position
Absolute Maximum Ratings
: Any
•
Weight :
0.011 gram
Parameter
Approximated
Symbol
115
150
105
150
120
200
140
200
.004(0.10)
56
80
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Sym
superimposed on rated
Breakdown Voltage
Collector-Base
load (JEDEC method)
-50
---
---
V
(BR)CBO
V
(I =-50uA, I
E
=0)
40
Typical
C
Thermal Resistance (Note 2)
R
ΘJA
Collector-Emitter Breakdown Voltage
V
120
.014(0.35)
-50
---
V
(BR)CEO
Typical Junction Capacitance (Note 1)
C
---
J
(I
C
=-1mA, I
B
=0)
-55 to +125
-55 to +150
Operating Temperature Range
Voltage
T
J
Emitter-Base Breakdown
.006(0.15)
-5
---
---
V
V
(BR)EBO
(I
E
Temperature
-
65
to +175
Storage
=-50uA, I
C
=0)
Range
TSTG
Collector Cut-off Current
---
---
-0.5
uA
I
CBO
(V
CB
=-50V, I
E
=0)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Emitter Cut-off Current
Dimensions in inches and (millimeters)
---
---
-0.5
uA
0.50
I
EBO
Maximum Forward Voltage at 1.0A DC
0.9
0.92
V
F
0.70
0.85
(V
EB
=-4V, I
C
=0)
DC Current Gain
0.5
100
600
---
h
FE
Maximum Average Reverse Current at @T A=25℃
I
250
R
(V
CE
=-5V, I
C
=-1mA)
10
@T A=125℃
Rated DC Blocking Voltage
Collector-Emitter Saturation Voltage
---
---
-0.3
V
V
CE(sat)
(I
C
=-10mA, I
B
=-1mA)
NOTES:
R
1
Input Resistor
13
K
7
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Transition Frequency
---
250
---
MHz
f
T
(V
CE
Resistance From
f=100MHz)
2- Thermal
=-10V, I
C
=-5mA,
Junction to Ambient
Parameter
Min
Max
Unit
1.0
.004(0.10)MAX.
30
*Marking: 94
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
.035(0.90)
.028(0.70)
WILLAS [ WILLAS ELECTRONIC CORP ]
