FM120-M
DTA114YCA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
SOD-123H
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
better reverse leakage current and thermal resistance.
Features
profile surface mounted application in order to
•
Low
•
•
•
•
•
•
•
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
•
High surge capability.
Epoxy meets UL 94 V-0 flammability rating
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
Moisure Sensitivity Level 1
Built-in bias resistors
planar chip, metal silicon junction.
inverter circuit
•
Silicon epitaxial
enable the configuration of an
without connecting external input resistors
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
The bias resistors consist of thin-film resistors with complete
•
RoHS
allow
for packing code suffix "G"
isolation to
product
negative biasing of the input. They also have the
Halogen
almost completely eliminating parasitic effects.
advantage of
free product for packing code suffix "H"
Only
Mechanical data
the on/off conditions need to be set for operation, making
device design easy
rated flame retardant
•
Epoxy : UL94-V0
0.031(0.8) Typ.
Pb-Free package is available
optimize board space.
•
Low power
for
high efficiency.
RoHS product
loss,
packing code suffix ”G”
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
.063(1.60)
.047(1.20)
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Min
Typ
Max
12
13
-0.3
---
---
V
RRM
---
20
-1.4
30
---
---
V
RMS
---
14
-0.3
21
---
---
20
-0.88
30
V
DC
---
---
-0.5
I
68
O
---
---
7.0
10
13
I
FSM
3.7
4.7
5.7
---
250
R
ΘJA
---
Unit
V
V
V
mA
A
K¡
MHz
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.008(0.20)
Symbol
Parameter
Marking Code
V
I(off)
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak
(V =-0.3V, I =-1mA)
Reverse Voltage
V
I(on)
O
O
V
O(on)
Output voltage
(I
O
/I
I
=-5mA/-0.25mA
Maximum RMS Voltage
I
I
Input current
(V
I
=-5V)
Maximum DC Blocking Voltage
I
O(off)
Output current
(V
CC
=-50V, V
I
=0)
Maximum Average Forward Rectified Current
G
I
DC current gain
(V
O
=-5V, I
O
=-5mA)
R
1
Input
resistance
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
superimposed on rated load (JEDEC method)
Transition frequency
f
T
(V
O
Resistance (Note 2)
Typical Thermal
=-10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
14
40
28
40
15
50
16
60
18
80
56
80
.003(0.08)
10
100
.083(2.10)
.110(2.80)
Symbol
Parameter
Method 2026
V
CC
Supply voltage
•
Polarity : Indicated by cathode band
V
IN
Input voltage
I
O
•
Mounting Position : Any
Output current
I
C(MAX)
P
C
•
Weight :
dissipation
Power
Approximated 0.011 gram
T
j
Junction temperature
Min
---
-40
---
---
---
MAXIMUM RATINGS AND ELECTRICAL
150
CHARACTERISTICS
T
stg
Storage temperature
-55
---
Ratings at 25℃ ambient temperature unless otherwise specified.
Typ
-50
---
-70
-100
200
150
Max
---
6
---
---
---
Unit
V
V
mA
mW
Dimensions in inches and (millimeters)
.006(0.15)MIN.
•
Case : Molded plastic, SOD-123H
Absolute
Terminals :Plated terminals, solderable per MIL-STD-750 ,
•
maximum ratings @ 25
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
115
150
105
150
.055(1.40)
.035(0.89)
120
200
140
200
35
42
.004(0.10)MAX.
50
60
1.0
30
70
100
.020(0.50)
.012(0.30)
C
J
T
J
TSTG
-55 to +125
40
Dimensions in inches and (millimeters)
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
MARKING: 54
V
F
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.50
0.70
Suggested Solder
Pad Layout
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
I
R
.035
.900
.031
0.5
.800
10
.079
2.000
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
