FM120-M
DTA124EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
.004(0.10)MIN.
•
Features
•
•
•
•
isolation to allow negative biasing of the input. They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects.
•
on/off conditions need to be set for
•
Only the
Epoxy : UL94-V0 rated flame retardant
operation, making
Case :
easy
device
•
design
Molded plastic, SOD-123H
,
•
maximum ratings @ 25
solderable per MIL-STD-750
Terminals :Plated terminals,
Absolute
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
Method 2026
Symbol
Parameter
Min
Typ
Max
Unit
.087(2.20)
Dimensions in inches and (millimeters)
•
Supply voltage
Polarity : Indicated by cathode band
---
V
CC
-50
---
V
.070(1.80)
V
IN
-40
---
10
V
Mounting Position : Any
•
Input voltage
-30
I
O
Output current
---
---
mA
I
C(MAX)
-100
•
Weight : Approximated 0.011 gram
P
d
Power dissipation
---
200
---
mW
T
j
Junction temperature
RATINGS AND ELECTRICAL CHARACTERISTICS
---
150
---
MAXIMUM
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
12
---
20
-3.0
14
-0.3
20
-0.36
-0.5
---
28.6
1.2
---
Unit
13
V
30
V
MHz
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
C
J
T
J
TSTG
-55 to +125
40
120
.016(0.40)
.008(0.20)
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
-
65
to
in inches and (millimeters)
Dimensions
+175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Suggested Solder
.043(1.10)
.032(0.80)
Symbol
Parameter
Min
Typ
Marking Code
V
I(off)
-0.5
---
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak Reverse Voltage
V
V
I(on)
(V
O
=-0.2V, I
O
=-5mA)
---
RRM
---
V
O(on)
Output voltage (I
O
/I
---
RMS
---
Maximum RMS Voltage
=
I
-10mA/-0.5mA
V
I
I
=
I
-5V)
Input current
Voltage
(V
---
---
Maximum DC Blocking
V
DC
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
Maximum Average Forward
(V
O
=-5V, I
Current
G
I
DC current gain
Rectified
O
-5mA)
=
56
I
O
---
R
1
Input resistance
15.4
22
Peak Forward Surge Current 8.3 ms single half sine-wave
I
R
2
/R
1
Resistance ratio
0.8
FSM
1.0
superimposed on rated
frequency
method)
Transition
load (JEDEC
f
T
---
250
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
R
ΘJA
.056(1.40)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
14
40
28
40
15
50
35
50
16
.047(1.20)
18
60
80
42
56
60
80
.004(0.10)MAX.
1.0
30
10
100
70
100
115
150
105
150
120
200
140
200
21
V
30
mA
A
K¡
.054(1.35)
.045(1.15)
.096(2.45)
.078(2.00)
0.040(1.0)
0.024(0.6)
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Pb-Free package
capability, low forward voltage drop.
is available
•
High current
RoHS
•
product for packing code suffix ”G”
High surge capability.
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
Epoxy meets UL 94 V-0 flammability rating
•
Silicon epitaxial planar chip, metal silicon junction.
Moisure Sensitivity Level 1
Lead-free parts meet environmental standards of
Built-in
•
bias resistors enable the configuration of an inverter circuit
MIL-STD-19500 /228
without connecting external input resistors
•
RoHS product for packing code suffix "G"
The bias resistors consist
for packing code suffix "H"
Halogen free product
of thin-film resistors with complete
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
V
F
I
R
0.50
0.70
*Marking:
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
15
0.5
0.70
10
0.90
0.85
Pad Layout
0.9
0.92
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.90 mm
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
