FM120-M
DTA143ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
Silicon epitaxial planar
packing
silicon junction.
Halogen free product for
chip, metal
code suffix “H”
•
Lead-free parts meet environmental standards of
Moisure Sensitivity Level 1
MIL-STD-19500 /228
Epoxy meets UL
for packing code suffix "G"
•
RoHS product
94 V-0 flammability rating
Built-in bias resistors enable the configuration of an inverter
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
Features
•
•
•
•
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
Electrical Characteristics @ 25
Maximum RMS Voltage
Symbol
Parameter
Min
Typ
Max
Unit
V
CC
Supply voltage
---
-50
---
V
MAXIMUM RATINGS AND ELECTRICAL
10
CHARACTERISTICS
V
IN
Input voltage
-30
---
V
-100
I
O
Ratings at
Output
ambient temperature unless otherwise specified.
---
25℃
current
---
mA
I
C(MAX)
-100
Single phase half wave, 60Hz, resistive of inductive load.
P
d
Power dissipation
---
200
---
mW
T
Junction
derate current
---
150
---
For
j
capacitive load,
temperature
by 20%
T
stg
Storage temperature
-55
150
SYMBOL
---
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
.008(0.20)
Marking Code
12
13
14
15
16
18
.003(0.08)
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
.006(0.15)MIN.
circuit
without connecting external input resistors
Mechanical data
•
The bias resistors consist of thin-film resistors with complete
•
Epoxy : UL94-V0 rated flame retardant
isolation to allow negative biasing of the input. They also have the
•
Case
of almost completely eliminating parasitic effects.
advantage
: Molded plastic, SOD-123H
,
Terminals
conditions need to be set
per MIL-STD-750
•
Only
•
the on/off
:Plated terminals, solderable
for operation, making
Method 2026
device design easy
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Absolute maximum ratings @ 25
•
Weight : Approximated 0.011 gram
.063(1.60)
.047(1.20)
.122(3.10)
0.071(1.8)
.106(2.70)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
V
RMS
14
21
28
35
42
56
80
70
100
.083(2.10)
.110(2.80)
105
150
140
200
40
120
Dimensions in inches and (millimeters)
-55 to +150
.020(0.50)
.012(0.30)
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Suggested Solder
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
*Marking:
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
13
0.50
0.70
10
.035
.900
Pad Layout
0.85
.055(1.40)
.035(0.89)
Symbol
DC Blocking Voltage
Parameter
Min
Maximum
V
DC
Typ
20
Max
30
Unit
40
---
-0.5
V
I(off)
---
V
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Average Forward Rectified Current
I
---
O
---
-3.0
V
V
I(on)
(V
O
=-0.3V, I
O
=-20mA)
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
---
---
-0.3
V
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
---
I
I
=
I
-5V)
Input current (V
---
-1.8
mA
superimposed on rated load (JEDEC method)
A
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
-0.5
Typical Thermal
current gain
(Note 2)
= -10mA)
R
ΘJA
---
G
I
DC
Resistance
(V
O
=-5V, I
O
30
---
R
1
Input resistance
3.29
J
4.7
6.11
K¡
Typical Junction Capacitance (Note 1)
C
R
2
/R
1
Resistance ratio
0.8
J
1.0
1.2
to +125
-55
Operating Temperature Range
T
Transition frequency
f
T
---
---
MHz
Storage Temperature Range
TSTG
250
(V
o
=-10V, I
o
=5mA, f=100MHz)
50
60
.004(0.10)MAX.
1.0
30
0.9
0.92
.031
0.5
.800
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.079
2.000
inches
mm
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
