FM120-M
DTC114YCA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
•
.063(1.60)
.047(1.20)
Features
ry
0.031(0.8) Typ.
•
•
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS
•
product for packing code suffix ”G”
Ultra high-speed switching.
•
Silicon epitaxial
for packing code suffix “H”
Halogen free product
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Epitaxial Planar Die Construction
MIL-STD-19500 /228
Complementary NPN Types Available
RoHS product for packing code suffix "G"
•
Built-In Biasing Resistors
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
Absolute
•
maximum ratings @ 25
band
Polarity : Indicated by cathode
Method 2026
Symbol
Parameter
Min
Typ
Max
Unit
Mounting Position : Any
•
Collector current
---
100
I
C
---
mA
V
IN
Input voltage
-6
---
+40
V
•
Weight : Approximated 0.011 gram
P
d
Power dissipation
---
200
---
mW
T
j
Junction temperature
---
150
---
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
im
ina
12
Max
20
---
14
1.4
20
0.3
0.88
0.5
---
13
5.7
---
Dimensions in inches and (millimeters)
.006(0.15)MIN.
Epoxy meets UL 94 V-0 flammability rating
Mechanical data
Moisure Sensitivity Level 1
•
Epoxy
Marking: 64
: UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Pr
el
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
.003(0.08)
Electrical Characteristics @ 25
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Symbol
Parameter
Min
Typ
Maximum Recurrent Peak Reverse Voltage
V
RRM
0.3
---
V
I(off)
Input voltage (V
CC
=5V, I
O
=100 A)
Maximum RMS Voltage
(V
O
=0.3V, I
O
=1mA)
V
RMS
---
---
V
I(on)
V
Maximum
Output voltage (I
O
=5mA,I
i
=0.25mA)
---
V
DC
---
O(on)
DC Blocking Voltage
I
I
Input current (V
I
=5V)
---
---
Maximum Average Forward Rectified Current
I
O(off)
Output current (V
CC
=50V, V
I
=0)
---
I
O
---
G
I
DC current gain (V
O
=5V, I
O
=5mA)
68
---
Peak Forward Surge Current 8.3 ms single half sine-wave
R
1
Input resistance
7
I
FSM
10
superimposed on rated load (JEDEC method)
R
2
/R
1
Resistance ratio
3.7
4.7
Typical Thermal Resistance (Note 2)
R
ΘJA
Transition frequency
---
250
f
T
(V
O
=10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
C
J
Operating Temperature Range
Storage Temperature Range
K
1.0
30
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
13
Unit
30
V
21
V
30
V
mA
A
14
40
28
40
15
16
50
60
.004(0.10)MAX.
35
42
50
60
18
80
56
80
10
100
70
100
.083(2.10)
.110(2.80)
115
150
105
150
120
200
140
200
MHz
T
J
TSTG
-55 to +125
Dimensions in inches
and (millimeters)
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Suggested Solder
V
F
I
R
0.50
0.70
0.5
0.85
Pad Layout
0.9
0.92
@T A=125℃
.031
.800
10
.035
.900
.079
2.000
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
