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DTC114YE 参数 Datasheet PDF下载

DTC114YE图片预览
型号: DTC114YE
PDF下载: 下载PDF文件 查看货源
内容描述: NPN数字晶体管 [NPN Digital Transistor]
分类和应用: 晶体数字晶体管开关光电二极管
文件页数/大小: 1 页 / 299 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
   
FM120-M
DTC114YE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
design,
Batch
Features
process leakage excellent power dissipation offers
better reverse
current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
.035(0.90)
.028(0.70)
Pb-Free package is available
Low profile surface mounted application in order to
RoHS product
board space.
code suffix ”G”
optimize
for packing
Low power loss,
for
efficiency.
Halogen free product
high
packing code suffix “H”
High current capability, low forward voltage
Epoxy meets UL 94 V-0 flammability rating
drop.
High surge capability.
Moisure Sensitivity Level 1
bias resistors enable the configuration of an inverter circuit
Built-in
Guardring for overvoltage protection.
connecting external input
without
Ultra high-speed switching.
resistors
Silicon epitaxial planar
thin-film resistors with complete
The bias resistors consist of
chip, metal silicon junction.
Lead-free
negative
environmental
input. They
isolation to allow
parts meet
biasing of the
standards of
also have the
MIL-STD-19500 /228
advantage of
product for packing code suffix "G"
parasitic effects.
RoHS
almost completely eliminating
Only the on/off
free product for packing
be set for
"H"
Halogen
conditions need to
code suffix
operation, making
device design easy
Mechanical data
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOD-123H
.067(1.70)
.059(1.50)
0.071(1.8)
0.056(1.4)
ry
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Absolute maximum ratings @ 25
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
.014(0.35)
.010(0.25)
0.040(1.0)
.043(1.10)
.035(0.90)
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
Weight
dissipation
Power
: Approximated 0.011 gram
Junction temperature
MAXIMUM
Storage temperature
RATINGS
ina
TSTG
.004(0.10)MIN.
Electrical Characteristics @ 25
Marking Code
Pr
el
RATINGS
 
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
im
AND
.008(0.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.004(0.10)
10
18
80
56
80
100
70
100
115
150
105
150
120
200
140
200
12
13
Maximum Recurrent Peak Reverse Voltage
V
Symbol
Parameter
Min
RRM
Typ
20
Max
30
Unit
0.3
RMS
---
14
---
V
I(off)
21
V
Maximum
Input
Voltage
(V
CC
=5V, I
O
=100­A)
RMS
voltage
V
---
V
V
I(on)
---
(V
O
=0.3V, I
O
=1mA)
1.4
Maximum DC Blocking Voltage
V
DC
0.1
20
0.3
30
V
V
O(on)
=
---
Output voltage (I
O
/I
I
5mA/0.25mA)
I
I
=
Rectified Current
---
I
O
---
0.88
mA
Maximum
Input current (V
I
5V)
Average Forward
 
I
­A
Output current (V
CC
=50V, V
I
0)
=
---
 
---
0.5
O(off)
Peak Forward Surge Current
(V
O
=5V, I
O
5mA)
single
G
I
DC current gain
8.3 ms
=
half sine-wave
68
I
FSM
---
---
R
1
Input
rated load
7.0
10
superimposed on
resistance
(JEDEC method)
13
R
2
/R
1
Thermal Resistance (Note 2)
Resistance ratio
3.7
ΘJA
4.7
5.7
 
Typical
R
Transition frequency
 
MHz
f
T
---
C
J
250
---
Typical Junction Capacitance
f=100MHz)
(V
O
=10V, I
O
=5mA,
(Note 1)
-55 to +125
Operating Temperature Range
T
J
Storage Temperature Range
.004(0.10)MAX.
.069(1.75)
.057(1.45)
Parameter
Method 2026
Supply voltage
Polarity : Indicated by cathode band
Input voltage
Mounting Position : Any
Output current
Typ
Max
Unit
50
---
V
Dimensions in inches and (millimeters)
---
40
V
70
---
---
mA
100
---
150
---
mW
---
150
---
ELECTRICAL CHARACTERISTICS
-55
---
150
Min
---
-6
 
.014(0.35)
.035(0.90)
.028(0.70)
0.9
 
 
40
.006(0.15)
120
-55 to +150
 
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
*Marking:
@T A=125℃
64
 
Dimensions in inches and (millimeters)
0.50
0.70
0.5
10
0.85
0.92
 
-
65
to +175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR