FM120-M
DTC124EE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Produc
•
Features
process design, excellent power dissipation offers
•
Batch
Features
Package outline
.035(0.90)
.028(0.70)
•
•
•
•
•
better reverse leakage current
Pb-Free package is available
and thermal resistance.
•
Low profile surface mounted application in order to
RoHS product
board space.
code suffix ”G”
optimize
for packing
•
Low power loss, high
packing
Halogen free product for
efficiency.
code suffix “H”
•
High current capability, low forward voltage
Epoxy meets UL 94 V-0 flammability rating
drop.
•
High surge capability.
Moisure Sensitivity Level 1
•
bias resistors enable the configuration of an inverter circuit
Built-in
Guardring for overvoltage protection.
•
connecting external input
without
Ultra high-speed switching.
resistors
•
Silicon epitaxial planar chip, metal silicon junction.
The bias resistors consist of thin-film resistors with complete
•
Lead-free parts meet environmental standards of
isolation to allow negative biasing of the input. They also have the
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.067(1.70)
.059(1.50)
0.071(1.8)
0.056(1.4)
advantage of
product for packing code suffix "G"
parasitic effects.
•
RoHS
almost completely eliminating
Only the on/off
free product for packing
be set for
"H"
Halogen
conditions need to
code suffix
operation, making
device design easy
Mechanical data
MIL-STD-19500 /228
.014(0.35)
.010(0.25)
.043(1.10)
.035(0.90)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
I
C(MAX)
P
d
T
j
T
stg
•
•
•
---
---
---
-55
---
---
---
150
mA
mW
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
40
120
.006(0.15)
-55 to +150
Dimensions in inches and (millimeters)
-
65
to +175
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.035(0.90)
.028(0.70)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Electrical Characteristics @ 25
20%
.008(0.20)
For capacitive load, derate current by
Symbol
Parameter
Min
Typ
Max
Unit
.004(0.10)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
---
V
V
I(off)
---
0.5
Input voltage (V
CC
=5V, I
O
=100A)
Marking Code
14
15
16
18
10
115
120
---
---
12
3.0
13
V
V
I(on)
(V
O
=0.2V, I
O
=5mA)
40
50
60
80
100
150
200
Maximum Recurrent Peak
(I
O
/I
I
10mA/0.5mA)
V
O(on)
Output voltage
Reverse Voltage
=
---
RRM
0.1
20
0.3
30
V
V
I
I
=
I
5V)
Input
Voltage
(V
current
---
RMS
---
14
0.36
21
mA
28
35
42
56
70
105
140
Maximum RMS
V
A
I
O(off)
Output current (V
CC
=50V, V
I
0)
=
---
---
0.5
.004(0.10)MAX.
Maximum DC Blocking Voltage
40
50
60
80
100
150
200
G
I
DC current gain (V
O
=5V, I
O
5mA)
=
56
V
DC
---
20
---
30
R
1
Input resistance
15.4
I
O
22
Maximum Average Forward Rectified Current
1.0
K¡
28.6
R /R
Resistance ratio
0.8
1.0
1.2
2
1
Peak Forward Surge Current 8.3 ms single half sine-wave
Transition frequency
30
.014(0.35)
f
T
---
I
FSM
250
---
MHz
(V =10V, I
load (JEDEC method)
superimposed
O
on rated
O
=5mA, f=100MHz)
.069(1.75)
.057(1.45)
V
CC
V
IN
I
O
Supply voltage
Method 2026
Input voltage
Polarity : Indicated by cathode band
Output current
Mounting Position : Any
Power dissipation
Weight :
temperature
Junction
Approximated 0.011 gram
Storage temperature
---
-10
50
---
30
100
150
150
---
---
40
.004(0.10)MIN.
•
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Absolute
•
maximum ratings @ 25
,
Symbol
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Min
Typ
Max
0.031(0.8) Typ.
Unit
V
V
*Marking: 25
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
