FM120-M
DTC143ZCA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS product
high-speed switching.
•
Ultra
for packing code suffix ”G”
•
free product for packing
metal silicon junction.
Halogen
Silicon epitaxial planar chip,
code suffix “H”
•
Planar Die Construction
Epitaxial
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Complementary NPN Types Available
RoHS product for packing code suffix "G"
Built-In
•
Biasing Resistors
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
.063(1.60)
.047(1.20)
•
Features
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
•
•
Absolute maximum ratings
2026
Method
@ 25
Symbol
I
C
V
IN
P
d
T
j
T
stg
Parameter
•
Polarity : Indicated by cathode band
Min
Collector current
---
•
Mounting Position : Any
Input voltage
-5
Power dissipation
---
•
Weight : Approximated 0.011 gram
Junction temperature
Storage temperature
MAXIMUM
RATINGS
Electrical Characteristics @ 25
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
.003(0.08)
Symbol
Parameter
Min
Typ
Max
Unit
Marking Code
voltage (V
CC
=5V, I
O
=100 A)
0.5
12
---
13
V
14
15
16
18
10
115
120
---
V
I(off)
Input
---
V
RRM
---
V
I(on)
20
1.3
30
V
40
50
60
80
100
150
200
(V
O
=0.3V, I =5mA)
Maximum Recurrent Peak Reverse
O
Voltage
V
O(on)
Output voltage (I
O
=5mA,I
i
=0.25mA)
---
---
0.3
V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
.004(0.10)MAX.
I
I
Input current (V
I
=5V)
---
---
1.8
mA
Maximum DC Blocking Voltage
20
0.5
30
A
40
50
60
80
100
150
200
I
O(off)
Output current (V
CC
=50V, V
I
=0)
---
V
DC
---
G
I
DC current gain (V
O
=5V, I
O
Current
80
I
O
---
---
Maximum Average Forward Rectified
=10mA)
1.0
R
1
Input resistance
3.29
4.7
6.11
K
.020(0.50)
R
2
Peak Forward Surge Current 8.3 ms single half sine-wave
8
I
FSM
10
/R
1
Resistance ratio
12
30
.012(0.30)
Transition frequency
---
250
---
MHz
f
superimposed on rated load (JEDEC method)
T
(V
O
=10V, I
O
=5mA, f=100MHz)
40
Typical Thermal Resistance (Note 2)
R
ΘJA
Dimensions in inches and (millimeters)
120
Typical Junction Capacitance (Note 1)
C
J
.083(2.10)
.110(2.80)
Typ
Max
Unit
Dimensions in inches and (millimeters)
100
---
mA
---
+30
V
200
---
mW
---
150
---
-55
---
150
AND ELECTRICAL CHARACTERISTICS
.006(0.15)MIN.
Epoxy meets UL 94 V-0 flammability rating
Mechanical data
Moisure Sensitivity Level 1
•
Epoxy
Marking: E23
: UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Operating Temperature Range
Storage Temperature Range
T
J
TSTG
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Suggested Solder
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Pad Layout
V
F
I
R
.035
.900
.055(1.40)
.035(0.89)
0.50
0.70
.031
.800
0.85
0.9
0.92
0.5
10
.079
2.000
inches
mm
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
