FM120-M
DTC144EUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
Features
•
•
•
•
•
•
better reverse leakage current and thermal resistance.
Absolute maximum
Method 2026
25
ratings @
•
Low profile surface mounted application in order to
optimize board space.
Pb-Free package is available
•
Low power loss, high efficiency.
RoHS
•
product for packing code suffix ”G”
High current capability, low forward voltage drop.
•
High surge capability.
Halogen free product for packing code suffix “H”
Epoxy meets UL
for overvoltage protection.
•
Guardring
94 V-0 flammability rating
Moisure Sensitivity Level 1
•
Ultra high-speed switching.
Built-in bias resistors enable
chip,
configuration
junction.
•
Silicon epitaxial planar
the
metal silicon
of an inverter circuit
without
Lead-free parts meet environmental standards of
•
connecting external input resistors
MIL-STD-19500 /228
The bias resistors consist of thin-film resistors with complete
RoHS product for packing code suffix "G"
•
isolation to allow negative biasing of the input. They also have the
Halogen free product for packing code suffix "H"
advantage of almost completely eliminating parasitic effects.
Mechanical data
Only the on/off conditions need to be set for operation, making
device
•
design
:
easy
Epoxy UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
SOT-323
0.146(3.7)
0.130(3.3)
SOD-123H
.004(0.10)MIN.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.010(0.25)
0.040(1.0)
.003(0.08)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
•
Polarity : Indicated by cathode band
Min
Parameter
Typ
Max
Unit
Dimensions in inches and (millimeters)
V
CC
Supply voltage
---
50
---
V
Mounting Position : Any
•
Input voltage
V
IN
-10
---
40
V
---
I
O
Output current
---
100
mA
•
Weight : Approximated 0.011 gram
P
d
Power dissipation
---
200
---
mW
T
j
Junction temperature
---
150
---
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
RATINGS
Electrical Characteristics @ 25
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
12
Max
20
---
14
3.0
0.3
20
0.18
0.5
---
61.1
1.2
---
.056(1.40)
.047(1.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking
Symbol
Code
Parameter
Min
Typ
V
Maximum
Input voltage (V
CC
=5V, I
O
=100A)
0.5
V
RRM
---
Recurrent Peak Reverse Voltage
I(off)
V
Maximum RMS Voltage
(V
O
=0.3V, I
O
=2mA)
---
V
RMS
---
I(on)
V
O(on)
Output voltage (I
O
/I
I
10mA/0.5mA)
=
---
---
Maximum
Input
Blocking
(V 5V)
DC
current
Voltage
V
DC
---
I
I
=
I
---
I
O(off)
Output current (V
CC
=50V, V
Current
=
I
0)
---
I
O
---
Maximum Average Forward Rectified
G
I
DC current gain (V
O
=5V, I
O
5mA)
=
68
---
Peak
R
1
Forward Surge Current 8.3 ms single half sine-wave
Input resistance
32.9
I
FSM
47
R
2
/R
1
Resistance
load
0.8
1.0
superimposed on rated
ratio
(JEDEC method)
Transition frequency
f
T
---
R
ΘJA
250
Typical Thermal Resistance (Note 2)
(V
O
=10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
C
J
Operating Temperature Range
Storage Temperature Range
13
Unit
30
V
21
V
V
30
mA
A
K¡
14
40
28
40
15
50
16
60
.054(1.35)
.045(1.15)
.087(2.20)
.070(1.80)
18
80
56
80
.096(2.45)
.078(2.00)
10
100
70
100
115
150
105
150
120
200
140
200
35
42
.004(0.10)MAX.
50
60
1.0
30
MHz
T
J
TSTG
-55 to +125
40
120
Dimensions in inches and (millimeters)
-55 to +150
.016(0.40)
.008(0.20)
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Suggested Solder
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.90
1.90
mm
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
*Marking: 26
0.50
0.70
Pad
Layout
0.85
.043(1.10)
.032(0.80)
0.9
0.92
0.70
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
