FM120-M
LM1MA141WA
THRU
Common Anode Silicon
FM1200-M
LM1MA142WA
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
WILLAS
Dual Switching Diode
SOD-123
PACKAGE
Pb Free Product
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use
•
Low power loss, high efficiency.
in ultra high speed switching applications. This device is housed in the S –
•
High current capability, low forward voltage drop.
package
surge capability.
for low power surface mount applications.
•
High
which is designed
•
•
Guardring for overvoltage protection.
Fast t
rr
, < 10 ns
•
•
Ultra high-speed switching.
Low C
D
, < 15 pF
•
Silicon epitaxial planar chip, metal silicon junction.
We declare that the material of product
•
Lead-free parts meet environmental standards of
compliance with RoHS requirements.
MIL-STD-19500 /228
Level 1
Moisture Sensitivity
•
RoHS product for packing code suffix "G"
DEVICE MARKING AND ORDERING INFORMATION
Halogen free product for packing code suffix "H"
SOD-123H
Features
Package outline
0.146(3.7)
0.130(3.3)
SOT-323 PACKAGE
COMMON ANODE
DUAL SWITCHING
0.071(1.8)
DIODE
0.056(1.4)
40/80 V-100 mA
SURFACE MOUNT
0.012(0.3) Typ.
Mechanical data
Device
Package
Shipping
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
LM1MA141WA
SOT-323
3000/Tape&Reel
•
Case : Molded plastic, SOD-123H
SOT-323
,
LM1MA142WA
3000/Tape&Reel
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Halogen free product for packing code suffix “H”
•
Mounting Position : Any
DEVICE MARKING
•
Weight : Approximated 0.011 gram
LM1MA141WA = MN
Pb-Free package is
2026
Method
available
RoHS product for packing code suffix ”G”
Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
SOT–323 /SC – 70
Dimensions in inches and (millimeters)
ANODE
3
LM1MA142WA =MO
LM1MA142WA
Maximum Recurrent Peak Reverse Voltage
V
RRM
Forward Current
Single
Maximum RMS Voltage
V
RMS
Dual
Maximum DC Blocking Voltage
V
DC
Peak Forward Current
Single
Maximum Average Forward Rectified Current
Marking Code
1
MAXIMUM
(T
A
= 25°C)
2
MAXIMUM RATINGS
RATINGS AND ELECTRICAL CHARACTERISTICS
CATHODE
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol Value
Unit
Single phase half wave, 60Hz, resistive of inductive load.
Reverse Voltage
LM1MA141WA
V
R
40
V
dc
For capacitive load, derate current by 20%
Marking Symbol
LM1MA142WA
80
X
Type No. 141WA142WA
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Symbol
MN
MO
Peak Reverse Voltage
LM1MA141WA
V
RM
40
V
dc
MN
U
I
F
12
20
14
Dual
Peak Forward Surge Current 8.3
Current
half sine-wave
Peak Forward Surge
ms single
Single
superimposed on rated load (JEDEC method)
Dual
Typical Thermal Resistance (Note 2)
I
O
I
FM
20
100
21
150
30
225
340
500
750
13
80
30
14
40
28
40
mAdc
mAdc
mAdc
15
50
35
50
16
60
The “X” represents a smaller alpha digit Date
80
100
150
Code. The Date Code indicates the actual month
42
in which the part was manufactured.
56
70
105
18
10
115
120
200
140
V
V
60
1.0
30
40
120
80
100
150
200
V
A
I
FSM
R
ΘJA
C
J
I
FSM(1)
A
THERMAL CHARACTERISTICS
Typical Junction Capacitance (Note 1)
Rating
Operating Temperature Range
Storage Temperature Range
Power Dissipation
Max
-55 to +125
Unit
150
mW
150
°C
0.50
-55 to +150
℃
Junction Temperature
Storage Temperature
CHARACTERISTICS
Symbol
T
J
P
D
TSTG
T
J
V
F
I
R
-
65
to +175
Maximum Forward Voltage at 1.0A DC
T
stg
SYMBOL
–55 ~ +150
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
°C
Characteristic
@T A=125℃
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
0.70
0.85
0.5
0.9
0.92
V
NOTES:
Symbol
Reverse Voltage Leakage Current LM1MA141WA
I
R
LM1MA142WA
V
F
V
R
C
D
t
rr(2)
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
=0, f=1.0 MHz
I
F
=10mA,V
R
=6.0V
R
L
=100Ω,I
rr
=0.1 I
R
Min
10
—
—
—
40
80
—
—
Max
0.1
0.1
1.2
—
—
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery
1. t = 1 SEC
LM1MA141WA
LM1MA142WA
Time
2012-06
Test Circuit
2. t
rr
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
