FM120-M
LM1MA141WK
THRU
Common Cathode Silicon
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
LM1MA142WK
Product
Pb Free
Dual Switching Diode
SOD-123 PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
Common
capability.
This
High surge
Cathode Silicon Epitaxial Planar Dual Diode is designed for
•
ultra high speed switching applications. This device is housed in the
use in
Guardring for overvoltage protection.
•
Ultra high-speed switching.
SOT-323 package which is designed for low power surface mount applications.
•
Silicon epitaxial planar chip, metal silicon junction.
• Fast t
rr
, < 3.0 ns
meet environmental standards of
•
Lead-free parts
MIL-STD-19500
• Low C
D
, < 2.0 pF
/228
•
RoHS product for packing code suffix "G"
We declare that the material of product
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Pb-Free package is available
RoHS product for packing code suffix ”G”
•
Epoxy : UL94-V0 rated flame retardant
Halogen free product for packing code suffix “H”
•
Case :
Sensitivity Level 1
Moisture
Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
compliance with RoHS requirements.
SOT–323 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
40/80 V–100 mA
0.040(1.0)
SURFACE MOUNT
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Marking : LM1MA141WK:MT LM1MA142WK :MU
Method 2026
MAXIMUM RATINGS
(T
A
= 25°C)
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Rating
Symbol Value
Unit
•
Mounting Position : Any
Reverse Voltage
LM1MA141WK
V
R
40
V
dc
•
Weight : Approximated 0.011 gram
SOT–323 /SC – 70
LM1MA142WK
80
Peak Reverse Voltage
RATINGS AND ELECTRICAL CHARACTERISTICS
LM1MA141WK
V
40
V
dc
RM
MAXIMUM
LM1MA142WK
Ratings at 25℃ ambient temperature unless otherwise specified.
Forward Current
Single
Single phase half wave, 60Hz, resistive of inductive load.
I
F
For capacitive load, derate current by 20%
Dual
Peak Forward Current
RATINGS
Marking Code
Maximum RMS Voltage
Maximum DC Blocking Voltage
Single
Dual
Dual
80
100
mAdc
150
I
FM120-M
H FM130-MH
mAdc
FM150-MH FM160-MH
225
FM140-MH
SYMBOL
FM
12
V
RRM
I
FSM(1)
20
V
RMS
V
DC
I
O
14
20
CATHODE
3
Maximum Recurrent
Surge
Reverse Voltage
Peak Forward
Peak
Current
Single
500
30
750
21
30
340
13
14
40
mAdc
28
40
15
50
35
50
16
60
42
1
FM180-MH FM1100-MH FM1150-MH FM1200-MH
18
ANODE
80
56
10
100
100
MT
X
70
2
115
150
105
150
120
200
140
200
V
V
Marking Symbol
Maximum Average Forward Rectified Current
THERMAL CHARACTERISTICS
60
80
Type No.141WK142WK
Symbol
MT
MU
V
Rating
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave
Power Dissipation
P
D
I
FSM
superimposed on rated load (JEDEC method)
Junction Temperature
T
J
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Storage Temperature
T
stg
R
ΘJA
C
J
T
J
Max
150
150
–55 ~ +150
Unit
mW
°C
°C
1.0
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
30
in which the part was manufactured.
A
A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current LM1MA141WK
V
R
=
FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
—
0.1
µAdc
CHARACTERISTICS
SYMBOL
FM120-MH
I
FM130-MH FM140-MH
35 V
R
V
F
LM1MA142WK
I
R
0.50
V
R
= 75 V
0.70
TSTG
U
Maximum Forward Voltage at 1.0A DC
@T
Rated DC Blocking Voltage
Reverse Breakdown Voltage
A=125℃
LM1MA141WK
NOTES:
2- Thermal Resistance From Junction to Ambient
Reverse Recovery
Maximum Average Reverse Current at @T A=25℃
Forward Voltage
V
F
V
R
C
D
t
rr(2)
I
F
= 100 mA
I
R
= 100
µA
V
R
=0, f=1.0 MHz
I
F
=10mA,V
R
=6.0V
R
L
=100Ω,I
rr
=0.1 I
R
LM1MA142WK
Time
—
0.5
—
10
40
80
—
—
0.85
0.1
1.2
—
—
0.9
0.92
V
Vdc
Vdc
pF
ns
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Diode Capacitance
2.0
3.0
1. t = 1 SEC
2. t
rr
Test Circuit
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
