WILLAS
WBFBP-03B Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage
MOSFET( N-Channel )
current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
DESCRIPTION
high efficiency.
•
Low power loss,
High
High current capability,
technology.
voltage drop.
•
cell density, DMOS
low forward
These products have been designed to
•
High
on-state resistance while provide rugged, reliable, and fast switching
minimize
surge capability.
•
Guardring for overvoltage protection.
performance. They can be used in most applications requiring up to 400mA DC
•
Ultra high-speed switching.
•
can deliver pulsed currents up to 2A. These products are particularly suited
and
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
for low voltage, low current applications such as small servo motor control, power
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
FM120-M
THRU
M7002NND03
FM1200-M
Pb Free Product
D
TOP
0.012(0.3) Typ.
Features
Package outline
WBFBP-03B
(1.2×1.2×0.5)
0.146(3.7)
unit: mm
0.130(3.3)
SOD-123H
G
0.071(1.8)
0.056(1.4)
S
D
1. GATE
2. SOURCE
3. DRAIN
BACK
S
0.040(1.0)
0.024(0.6)
•
RoHS product for packing code
switching
MOSFET gate drivers, and other
suffix "G"
applications.
FEATURES
•
Epoxy : UL94-V0 rated flame retardant
High density cell design for low R
DS(ON)
•
Case : Molded plastic, SOD-123H
,
Voltage controlled small signal switch
•
Terminals :Plated terminals, solderable per MIL-STD-750
Rugged and reliable
2026
Method
Mechanical data
G
0.031(0.8) Typ.
0.031(0.8) Typ.
•
saturation current capability
High
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
APPLICATION
Dimensions in inches and (millimeters)
N-Channel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Ratings at 25℃ ambient temperature unless otherwise specified.
MARKING: 72
RoHS product for packing code suffix ”G”
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
SYMBOL
RATINGS
D
115
Marking Code
12
14
15
16
18
10
120
Halogen free product for packing code suffix “H”
13
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Single phase half wave, 60Hz, resistive of inductive load.
Pb-Free package is available
For capacitive load, derate current by 20%
V
RRM
V
RMS
V
DC
I
O
I
FSM
20
14
30
21
40
50
60
80
56
100
70
28
40
35
50
42
60
1.0
30
72
105
S
150
150
200
140
Volts
Volts
Volts
Amps
20
30
80
100
G
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated
RATINGS
(T
a
=25
℃
MAXIMUM
load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Symbol
unless otherwise noted
)
R
ΘJA
C
J
T
J
Parameter
V
DS
I
D
P
D
T
J
Drain-Source
Voltage
-55 to +125
40
Value
120
60
-55 to +150
Units
V
V
mA
0.9
℃/W
PF
℃
℃
V
GSS
Storage Temperature Range
Gate-Source Voltage - Continuous
TSTG
±20
-
65
to +175
115
0.50
0.70
0.5
10
CHARACTERISTICS
Maximum Drain Current - Pulsed
Power Dissipation
V
F
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Maximum Forward Voltage at 1.0A DC
150
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
R
θJA
T
stg
Thermal Resistance
from
Junction to Ambient
Junction Temperature
I
R
@T A=125℃
833
150
0.85
mW
℃
℃
℃/W
0.92
Volts
mAmps
Storage Temperature
-55~+150
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
