SOT-23
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
Plastic-Encapsulate Diodes
MMBD
FM120-M
4
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
better
SWITCHING
reverse leakage current and thermal resistance.
DIODE
•
Low profile surface mounted application in order to
optimize board space.
FEATURES
•
Low power loss, high efficiency.
MMBD2004S
type
capability, low
switching dual
drop.
•
High current
is a silicon
forward voltage
in series diode
manufactured by
capability.
•
High surge
the epitaxial planar process, designed for
•
Guardring for overvoltage protection.
applications requiring high voltage capability. Power dissipation
•
Ultra high-speed switching.
Pb-Free package is available
metal silicon junction.
•
Silicon epitaxial planar chip,
RoHS
•
Lead-free parts meet environmental standards of
product for packing code suffix ”G”
MIL-STD-19500 /228
Halogen free
product for
for packing
suffix "G"
product
packing code
code suffix “H”
RoHS
•
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
0.040(1.0)
0.024(0.6)
Moisture Sensitivity Level 1
packing code suffix "H"
Halogen free product for
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
MARKING : B6D
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity : Indicated by cathode band
Parameter
•
Mounting Position : Any
Non-Repetitive Peak
Reverse Voltage
•
Weight : Approximated 0.011 gram
DC Blocking Voltage
0.031(0.8) Typ.
ry
Limit
300
240
200
225
625
4.0
15
50
35
13
30
21
30
14
40
28
40
0.031(0.8) Typ.
Maximum Ratings @Ta=25℃
Method 2026
Symbol
V
RM
V
R
ina
12
20
14
Dimensions in inches and (millimeters)
Unit
V
V
mA
mA
mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak Repetitive Current
I
specified.
Ratings at 25℃ ambient temperature unless otherwise
O
Single phase
Forward Current
Continuous
half wave, 60Hz, resistive of inductive load.
I
F
For capacitive load, derate current by 20%
RATINGS
Peak Repetitive Forward Current
Marking Code
Forward Surge
Maximum Recurrent Peak Reverse Voltage
Pr
el
im
I
V
RRM
FRM
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Current t=1μs
I
FSM
Forward Surge Current t=1s
Maximum RMS Voltage
Maximum
Dissipation
Power
DC Blocking Voltage
I
FSM
V
RMS
V
DC
Pd
I
O
1.0
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
A
115
150
120
200
140
200
A
105
150
mW
Vol
Vol
20
250
50
150
-55~+150
Vol
Maximum Average Forward Rectified Current
Junction
Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage
Temperature Range
I
FSM
T
STG
C
J
T
J
℃
℃
Am
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
R
ΘJA
-55 to +150
℃/
PF
-55 to +125
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Operating Temperature Range
T
J
TSTG
℃
-
65
to +175
℃
Parameter
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
conditions
Min
Max
Unit
V
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Reverse breakdown voltage
V
F
@T A=125℃
I
R
= 100μA
V
R
=240V
I
F
=100mA
V
R
=0V
f=1MHz
0.50
0.70
240
0.5
10
0.85
0.9
0.92
Vol
I
R
mAm
Reverse voltage leakage current
0.1
1
5
50
μA
V
pF
ns
NOTES:
Forward
1 MHZ and
1- Measured at
voltage
applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Diode capacitance
Reveres recovery time
I
F
=I
R
=30mA,R
L
=100Ω
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
