FM120-M
MMBD4148T
THRU
BAS16T
SOT-523 Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Product
Features
SWITCHING DIODE
Package outline
SOT-523
SOD-123H
•
Batch process design, excellent power dissipation offers
FEATURES
reverse leakage current and thermal resistance.
better
•
Switching Speed
Fast
Low profile surface mounted application in order to
optimize board space.
For
•
General Purpose Switching Applications
Low power loss, high efficiency.
•
Conductance
High
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
Silicon epitaxial planar
packing
silicon junction.
Halogen free product for
chip, metal
code suffix “H”
•
Lead-free parts meet environmental standards of
Moisture Sensitivity Level 1
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
3
•
RoHS product for packing code suffix "G"
Marking:
Halogen free product for packing code suffix "H"
MMBD4148T: KA2,
Mechanical data
BAS16T:A2
•
Epoxy : UL94-V0 rated flame retardant
Maximum Ratings @Ta=25℃
•
Case : Molded plastic, SOD-123H
,
•
Terminals
Parameter
:Plated terminals, solderable per MIL-STD-750
Symbol
Non-Repetitive Peak
Reverse Voltage
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Limit
100
Unit
V
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Peak Repetitive Peak
Reverse Voltage
•
Mounting Position : Any
Working
•
Peak Reverse Voltage
0.011 gram
Weight : Approximated
DC Blocking Voltage
RMS Reverse Voltage
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
75
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
53
300
150
13
30
21
30
14
1.0
40
28
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
Ratings at 25℃ ambient temperature unless otherwise specified.
Forward Continuous Current
resistive of inductive load.
I
FM
Single phase half wave, 60Hz,
For capacitive load, derate current by
I
O
Average Rectified Output Current
20%
V
mA
mA
A
10
100
70
115
150
105
150
120
200
140
200
Peak
Forward Surge
RATINGS
@t=1.0μs
Current
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
2.0
Power Dissipation
Maximum Recurrent Peak Reverse Voltage
@
t=1.0s
I
FSM
Pd
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
12
20
14
Maximum RMS Voltage
200
mW
℃
Vo
Vo
Thermal Resistance
Voltage
to Ambient
Maximum DC Blocking
Junction
Junction
Temperature
Rectified Current
Maximum Average Forward
R
θJA
20
T
j
T
STG
40
625
K/W
100
℃
Vo
150
-55~+150
Am
Storage
Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Electrical Ratings @Ta=25℃
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Typical Junction
Parameter
(Note 1)
Capacitance
Min
75
0.715
0.50
-55 to +125
Conditions
I
F
=1mA
I
F
=10mA
0.85
0.9
0.92
Symbol
T
J
C
J
Typ
Max
Unit
V
V
V
0.70
℃
P
Reverse breakdown voltage
Storage Temperature Range
-55 to +150
℃
V
TSTG
(BR)
V
F1
V
F2
V
F3
V
F
I
R
-
65
to +175
I
R
=1μA
℃
CHARACTERISTICS
Maximum
voltage
Forward
Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.855
1.0
1.25
1
25
2
4
Vo
Maximum Average Reverse Current at @T A=25℃
V
V
μA
nA
pF
ns
0.5
10
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
@T A=125℃
V
F4
mA
Reverse current
NOTES:
I
R1
R2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I
2- Thermal Resistance From Junction to Ambient
Capacitance between terminals
Reverse recovery time
C
T
t
rr
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
