WILLAS
SOT-323 Plastic-Encapsulate DIODE
Features
•
Batch process design, excellent power dissipation offers
FM120-M
MMBD4148W
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Package outline
SOD-123H
SWITCHING DIODE
•
Low profile surface mounted application in order to
better reverse leakage current and thermal resistance.
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
optimize board space.
•
Low power loss, high efficiency.
FEATURES
•
High current capability, low forward voltage drop.
Fast
surge capability.
•
High
Switching Speed
•
Guardring for overvoltage
Switching Applications
For General Purpose
protection.
•
Ultra high-speed switching.
High Conductance
•
Silicon epitaxial planar chip, metal silicon junction.
Pb-Free package is available
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix ”G”
RoHS product for packing code suffix "G"
•
Halogen
free product for packing code suffix "H"
Halogen
free product for packing code suffix “H”
0.071(1.8)
0.056(1.4)
Moisture Sensitivity Level 1
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
A2
Marking:
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Method 2026
•
Polarity : Indicated by cathode band
Parameter
•
Mounting Position : Any
Non-Repetitive Peak reverse voltage
•
Weight : Approximated 0.011 gram
Symbol
V
RM
Limits
100
Unit
V
V
V
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
V
RRM
Peak Repetitive Peak reverse voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
75
Working Peak Reverse Voltage
V
RWM
Ratings at 25℃
Voltage
DC Blocking
ambient temperature unless otherwise specified.
V
R
RMS
capacitive load, derate current by 20%
For
Reverse Voltage
Forward Continuous Current
RATINGS
Average Rectified Output Current
Marking Code
Single phase half wave, 60Hz, resistive of inductive load.
V
R(RMS)
I
O
12
20
14
20
13
30
21
30
53
150
14
40
2.0
300
mA
I
FM
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
mA
10
V
RRM
100
100
115
150
105
150
120
200
140
200
Maximum Recurrent Peak Reverse Voltage
Peak forward surge current @=1.0μs
Maximum RMS Voltage
Maximum DC Blocking Voltage
Vo
@=1.0s
I
FSM
V
RMS
V
DC
I
O
1.0
200
625
150
40
28
A
70
mW
℃
Vo
Vo
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Average Forward Rectified Current
P
D
Am
R
θJA
I
FSM
j
T
STG
R
ΘJA
K/W
℃
Am
Storage temperature
(Note 2)
Typical Thermal Resistance
Typical Junction Capacitance (Note 1)
Storage Temperature Range
T
-65~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
-55 to +125
Operating Temperature Range
T
J
TSTG
C
J
Test
conditions
0.70
MAX
0.85
℃
P
-55 to +150
℃
-
65
to +175
℃
Parameter
CHARACTERISTICS
Maximum Forward Voltage
voltage
Reverse breakdown
at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
Symbol
V
F
V
(BR) R
I
R
MIN
75
0.5
10
UNIT
0.9
V
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
I
R
= 10µA
0.50
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
Vo
Reverse voltage leakage current
I
R
1
25
0.715
0.855
1
1.25
2
4
µA
nA
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Forward voltage
V
F
V
Diode capacitance
Reveres recovery time
C
D
t
rr
pF
nS
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
