WILLAS
Diodes
SOT-523 Plastic-Encapsulate
FM120-M
MMBD4448HTx
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
SWITCHING DIODE
Package outline
SOT-523
Features
FEATURES
•
Batch process design, excellent power dissipation offers
Fast Switching Speed
current and thermal resistance.
better reverse leakage
SOD-123H
•
Low profile surface mounted application in order to
For General Purpose Switching Applications
optimize board space.
0.146(3.7)
•
Conductance
High
Low power loss, high efficiency.
0.130(3.3)
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip,
Moisture Sensitivity Level 1
metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V
RRM
Peak Repetitive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak Reverse Voltage
im
V
R(RMS)
I
FM
I
O
V
RRM
V
RMS
I
O
12
20
14
13
30
21
30
ina
80
57
14
40
28
40
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
℃
•
Mounting Position : Any
Parameter
Symbol
Limit
Unit
•
Weight : Approximated 0.011 gram
100
V
V
RM
Non-Repetitive Peak Reverse Voltage
V
RWM
Working
at 25℃ ambient temperature unless otherwise specified.
Ratings
Peak Reverse Voltage
For capacitive load, derate
RMS Reverse Voltage
current by 20%
Single phase
Voltage
V
R
DC Blocking
half wave, 60Hz, resistive of inductive load.
RATINGS
V
V
Forward
Code
Continuous Current
Marking
Pr
el
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
500
Maximum Recurrent
Output Current
Average Rectified
Peak Reverse Voltage
Maximum DC Blocking Voltage
15
50
250
35
4.0
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
115
100
mA
150
70
100
mA
120
200
140
200
V
Maximum RMS
Surge
Peak Forward
Voltage
Current @t=1.0μs
Maximum Average Forward Rectified Current
@t =1.0s
I
DC
V
FSM
P
D
20
1.5
A
mW
℃/W
℃
105
150
V
V
Power Dissipation
150
833
-55 ~+150
A
Thermal Resistance Junction to Ambient
Storage
Thermal Resistance (Note 2)
Temperature
Typical
superimposed on rated load (JEDEC method)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
R
θJA
A
STG
R
ΘJA
T
Electrical
Temperature
@Ta=25℃
Operating
Ratings
Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
C
J
T
J
TSTG
-55 to +125
-55 to +150
℃
-
65
to +175
Parameter
Symbol
V
F
R
Min
Typ
Max
0.50
Unit
0.70
Conditions
0.85
R
CHARACTERISTICS
Reverse
breakdown voltage
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
80
V
V
I =2.5μA
Maximum Average Reverse Current at @T A=25℃
V
F1
I
R
@T A=125℃
V
F2
Rated DC Blocking Voltage
Forward voltage
NOTES:
V
F3
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.62
0.72
0.855
1.0
1.25
V
V
V
V
0.5
10
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
= 70V
V
R
=20V
V
R
=6V,f=1MHz
V
R
=6V,I
F
=5mA
0.9
0.92
V
m
V
F4
I
R1
I
R2
C
T
t
rr
Reverse current
0.1
25
3.5
4
μA
nA
pF
ns
Capacitance between terminals
Reverse
recovery time
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
