FM120-M
MMBD4448V
THRU
SOT-563 Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better
SWITCHING
reverse leakage current and thermal resistance.
DIODE
•
Low profile surface mounted application in order to
FEATURES
optimize board space.
•
Low power loss, high
Fast switching speed
efficiency.
•
High current capability, low forward voltage drop.
High conductance
•
High surge capability.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix “H”
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Moisture Sensitivity Level 1
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
SOT-563
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
6
5
4
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
MARKING: KAL
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Maximum Ratings @Ta=25℃
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Method 2026
1
0.031(0.8) Typ.
2
3
0.024(0.6)
0.040(1.0)
0.031(0.8) Typ.
Symbol
V
RM
V
R(RMS)
Limit
100
57
Unit
V
V
•
Polarity : Indicated by cathode band
Non-Repetitive Peak
Reverse Voltage
•
Mounting Position : Any
RMS Reverse Voltage
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
V
RRM
Peak Repetitive Peak
Reverse Voltage
80
V
RWM
Working Peak
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Reverse Voltage
Ratings at 25℃ ambient
DC Blocking Voltage
temperature unless otherwise
R
specified.
V
V
Forward Continuous Current
by 20%
For capacitive load, derate current
Average Rectified Output Current
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
I
FM
500
12
20
14
20
13
30
21
30
14
40
28
40
15
4.0
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
mA
115
120
200
140
200
250
I
O
FM1150-MH FM1200-MH
UN
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
mA
I
FSM
V
RRM
V
RMS
V
DC
I
O
R
θJA
I
FSM
Marking Code
Peak
Forward Surge Current
@t=1.0μs
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
@t =1.0s
1.5
150
50
35
50
A
150
mW
105
Vol
Vol
Power Dissipation
Pd
150
Vol
Thermal
Average Forward Rectified
to
Resistance Junction
Current
Maximum
Ambient
Storage
Temperature
(JEDEC method)
superimposed on rated load
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Electrical Ratings @Ta=25℃
Operating Temperature Range
Storage Temperature Range
Parameter
Peak Forward Surge Current 8.3 ms single half sine-wave
T
833
-55 ~+150
℃/W
℃
Am
T
STG
Am
R
ΘJA
C
J
T
J
TSTG
Symbol
-55 to +125
-55 to +150
℃/W
PF
Max
Unit
0.70
V
℃
Min
Typ
-
65
to +175
Conditions
℃
Reverse breakdown voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
80
V
(BR)
V
I
R
FM1100-MH
FM1150-MH
FM1200-MH
UN
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
=2.5μA
V
V
F1
F
I
V
F2
R
0.62
0.50
0.72
0.855
1.0
1.25
0.1
V
V
V
μA
nA
pF
ns
0.5
10
0.85
I =5mA
F
0.9
0.92
Vol
Forward voltage
NOTES:
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=70V
V
R
=20V
V
R
=6V,f=1MHz
V
R
=6V, I
F
=5mA
mAm
V
F3
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V
F4
Reverse current
2- Thermal Resistance From Junction to Ambient
I
R1
I
R2
C
T
t
rr
25
3.5
4
Capacitance between terminals
Reverse
recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
