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MMBD7000W 参数 Datasheet PDF下载

MMBD7000W图片预览
型号: MMBD7000W
PDF下载: 下载PDF文件 查看货源
内容描述: 双开关二极管 [Dual Switching Diode]
分类和应用: 二极管开关
文件页数/大小: 3 页 / 336 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号MMBD7000W的Datasheet PDF文件第2页浏览型号MMBD7000W的Datasheet PDF文件第3页  
WILLAS
Dual Switching Diode
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURE
Low profile surface mounted application in order to
optimize board space.
We declare that the material of product
Low power loss, high efficiency.
compliance with RoHS requirements.
High current capability, low forward voltage drop.
Moisture Sensitivity Level 1
High surge capability.
ORDERING INFORMATION
Guardring for overvoltage protection.
Device
high-speed switching.
Marking
Shipping
Ultra
Silicon epitaxial planar chip, metal silicon junction.
M5C
MMBD7000W
3000/Tape & Reel
Lead-free parts meet environmental standards of
Pb-Free
MIL-STD-19500 /228
package is available
RoHS
RoHS product for packing
suffix
suffix "G"
product for packing code
code
”G”
Halogen
Halogen free product for packing code suffix "H"
free product for packing code suffix “H”
FM120-M
MMBD7000W
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Features
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
0.071(1.8)
0.056(1.4)
1
2
SOT-323
Mechanical data
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Value
Epoxy : UL94-V0 rated flame retardant
Reverse
Case : Molded plastic, SOD-123H
V
R
100
Voltage
200
Forward Current
I
F
,
Terminals :Plated terminals, solderable per MIL-STD-750
Peak Forward Surge Current
Method 2026
I
FM(surge)
500
Unit
Vdc
mAdc
mAdc
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
THERMAL CHARACTERISTICS
Polarity : Indicated by cathode band
Mounting Position : Any
Characteristic
Symbol
Weight : Approximated 0.011
Total Device Dissipation FR– 5 Board
(1)
gram
P
D
Dimensions in inches and (millimeters)
1
Max
200
Unit
mW
ANODE
3
CATHODE/ANODE
2
CATHODE
T
A
= 25°C
MAXIMUM RATINGS AND ELECTRICAL
1.6
Derate above 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal Resistance, Junction to Ambient
R
θ
JA
556
CHARACTERISTICS
mW/°C
°C/W
mW
 
Single
Device Dissipation
60Hz, resistive of inductive load.
Total
phase half wave,
P
D
(2)
For capacitive load, derate current by 20%
Alumina Substrate, T
A
= 25°C
Derate above 25°C
RATINGS
Thermal Resistance, Junction to Ambient
Marking Code
Junction and Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
300
R
θ
JA
417
12
13
°C/W
14
T
J
, T
stg
RRM
–55 to +150
30
°C
40
20
V
V
RMS
V
DC
I
O
14
20
21
30
28
40
2.4
mW/°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
15
50
35
50
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
DEVICEMARKING
Maximum DC Blocking Voltage
MMBD7000W=M5C
Maximum Average Forward Rectified Current
 
Vo
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
I
FSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)(EACH
DIODE)
 
Unit
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Characteristic
OFFCHARACTERISTICS
R
ΘJA
C
J
T
J
TSTG
Symbol
 
Min
Max
Reverse Breakdown Voltage
(I
(BR)
= 100
µ
Adc)
V
(BR)
to +125
100
-55
 
 
40
120
 
Vdc
to +150
-55
 
P
 
Reverse Voltage Leakage Current
-
65
to +175
µ
Adc
0.85
0.9
0.92
 
(V
R
= 50 Vdc)
CHARACTERISTICS
(V
R
= 100 Vdc)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
I
1.0
SYMBOL
FM120-MH
R
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
I
R2
(V
R
= 50 Vdc,125°C)
Maximum Average Reverse Current at @T A=25℃
Forward Voltage
(I
F
= 1.0 mAdc)
@T A=125℃
I
R3
V
F
0.50
0.70
3.0
100
0.5
Vo
 
0.55
0.67
0.75
t
rr
C
0.7
0.82
1.1
4.0
1.5
10
Vdc
mA
NOTES:
10 mAdc)
(I
F
=
1-
(I
F
= 100
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Measured
mAdc)
 
 
2-
Reverse
Resistance From Junction to Ambient
Thermal
Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
Capacitance(V
R
=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ns
pF
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.