WILLAS
Dual Switching Diode
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURE
•
Low profile surface mounted application in order to
optimize board space.
We declare that the material of product
•
Low power loss, high efficiency.
compliance with RoHS requirements.
•
High current capability, low forward voltage drop.
Moisture Sensitivity Level 1
•
High surge capability.
ORDERING INFORMATION
•
Guardring for overvoltage protection.
Device
high-speed switching.
Marking
Shipping
•
Ultra
•
Silicon epitaxial planar chip, metal silicon junction.
M5C
MMBD7000W
3000/Tape & Reel
•
Lead-free parts meet environmental standards of
Pb-Free
MIL-STD-19500 /228
package is available
RoHS
•
RoHS product for packing
suffix
suffix "G"
product for packing code
code
”G”
Halogen
Halogen free product for packing code suffix "H"
free product for packing code suffix “H”
FM120-M
MMBD7000W
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Features
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
0.071(1.8)
0.056(1.4)
1
2
SOT-323
Mechanical data
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Value
•
Epoxy : UL94-V0 rated flame retardant
Reverse
Case : Molded plastic, SOD-123H
V
R
100
•
Voltage
200
Forward Current
I
F
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Peak Forward Surge Current
Method 2026
I
FM(surge)
500
Unit
Vdc
mAdc
mAdc
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
THERMAL CHARACTERISTICS
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Characteristic
Symbol
•
Weight : Approximated 0.011
Total Device Dissipation FR– 5 Board
(1)
gram
P
D
Dimensions in inches and (millimeters)
1
Max
200
Unit
mW
ANODE
3
CATHODE/ANODE
2
CATHODE
T
A
= 25°C
MAXIMUM RATINGS AND ELECTRICAL
1.6
Derate above 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal Resistance, Junction to Ambient
R
θ
JA
556
CHARACTERISTICS
mW/°C
°C/W
mW
Single
Device Dissipation
60Hz, resistive of inductive load.
Total
phase half wave,
P
D
(2)
For capacitive load, derate current by 20%
Alumina Substrate, T
A
= 25°C
Derate above 25°C
RATINGS
Thermal Resistance, Junction to Ambient
Marking Code
Junction and Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
300
R
θ
JA
417
12
13
°C/W
14
T
J
, T
stg
RRM
–55 to +150
30
°C
40
20
V
V
RMS
V
DC
I
O
14
20
21
30
28
40
2.4
mW/°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
DEVICEMARKING
Maximum DC Blocking Voltage
MMBD7000W=M5C
Maximum Average Forward Rectified Current
Vo
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)(EACH
DIODE)
Unit
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Characteristic
OFFCHARACTERISTICS
R
ΘJA
C
J
T
J
TSTG
Symbol
Min
Max
Reverse Breakdown Voltage
(I
(BR)
= 100
µ
Adc)
V
(BR)
to +125
100
-55
—
40
120
Vdc
to +150
-55
℃
P
℃
Reverse Voltage Leakage Current
-
65
to +175
µ
Adc
0.85
0.9
0.92
℃
(V
R
= 50 Vdc)
CHARACTERISTICS
(V
R
= 100 Vdc)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
I
—
1.0
SYMBOL
FM120-MH
R
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
I
R2
(V
R
= 50 Vdc,125°C)
Maximum Average Reverse Current at @T A=25℃
Forward Voltage
(I
F
= 1.0 mAdc)
@T A=125℃
I
R3
V
F
0.50
—
—
0.70
3.0
100
0.5
Vo
0.55
0.67
0.75
t
rr
C
—
—
0.7
0.82
1.1
4.0
1.5
10
Vdc
mA
NOTES:
10 mAdc)
(I
F
=
1-
(I
F
= 100
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Measured
mAdc)
2-
Reverse
Resistance From Junction to Ambient
Thermal
Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
Capacitance(V
R
=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ns
pF
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.