WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
MMBT2222ADW1T1
THRU
Dual General Purpose
BARRIER RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT SCHOTTKY
Transistors
PACKAGE
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
•
High current capability, low forward voltage drop.
•
High surge capability.
We declare that material of product compliance
Guardring for overvoltage protection.
with
•
Ultra high-speed switching.
ROHS requirements.
•
•
Silicon epitaxial planar chip, metal silicon junction.
Pb-Free package is available
standards of
•
Lead-free parts meet environmental
MIL-STD-19500 /228
RoHS product
for packing code suffix "G"
suffix ”G”
for packing code
RoHS product
•
Halogen free product for
for packing
"H"
Halogen free product
packing code suffix
code suffix
•
Low power loss,
NPN Silicon
high efficiency.
optimize board space.
0.146(3.7)
0.130(3.3)
6
0.012(0.3) Typ.
5
4
0.071(1.8)
0.056(1.4)
1
2
3
SOT-363
Mechanical data
“H”
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded
MAXIMUM RATINGS
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Rating
Symbol
Value
Unit
Method
Collector–Emitter Voltage
2026
V
CEO
•
Polarity : Indicated by cathode band
Collector–Base Voltage
V
CBO
•
Mounting Position : Any
Emitter–Base Voltage
V
EBO
•
Weight : Approximated 0.011 gram
Collector Current – Continuous
I
C
40
75
6.0
600
Vdc
Vdc
Vdc
mAdc
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
THERMAL CHARACTERISTICS
Marking Code
Characteristic
Maximum Recurrent Peak Reverse Voltage
Total Package Dissipation (Note 1)
(3)
(2)
(1)
FM1150-MH FM1200-MH
UNIT
Q
1
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
Q
2
Symbol
P
D
R
qJA
V
RRM
V
RMS
Maximum RMS Voltage
T
A
= 25°C
Max
12
150
20
14
Unit
13
30
mW
21
30
°C/W
14
40
28
40
15
50
35
50
16
60
(4)
42
60
1.0
30
18
80
(5)
56
80
10
100
70
100
115
150
120
200
140
200
Volts
Volts
Volts
(6)
105
150
V
DC
833
20
Junction to Ambient
Maximum Average Forward Rectified Current
I
O
–55 to +150
Junction and Storage Temperature
T
J
, T
stg
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Maximum DC Blocking Voltage
Thermal Resistance,
superimposed on rated load (JEDEC method)
Amps
°C
℃/W
PF
℃
℃
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
40
120
-55 to +150
-
65
to +175
ORDERING INFORMATION
CHARACTERISTICS
Device
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
Shipping
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
Maximum Average Reverse Current at @T A=25℃
MMBT2222ADW1T1
3000/Tape & Reel
I
R
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
