FM120-M
THRU
MMBT2222AWT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistors
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low
Silicon
NPN
profile surface mounted application in order to
optimize board space.
These transistors are designed for general
•
Low power loss, high efficiency.
High current capability, low forward voltage drop.
•
purpose amplifier applications. They are
High surge capability.
•
housed in the SOT–323/SC–70 package which
Guardring for overvoltage protection.
•
is designed for low power surface mount
Ultra high-speed switching.
•
applications.
•
Silicon epitaxial planar chip, metal silicon junction.
We declare that the material of product
•
Lead-free parts meet environmental standards of
compliance with RoHS requirements.
MIL-STD-19500 /228
Pb-Free package
packing code suffix "G"
•
RoHS product for
is available
RoHS product
product for packing
suffix
suffix "H"
Halogen free
for packing code
code
”G”
SOD-123H
WILLAS
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
COLLECTOR
0.071(1.8)
0.056(1.4)
1
BASE
2
EMITTER
Halogen free product for packing code suffix “H”
Mechanical data
SOT–323
0.040(1.0)
0.024(0.6)
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic,
MAXIMUM RATINGS
SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Collector–Base Voltage
V
CBO
•
Mounting Position : Any
Emitter–Base Voltage
V
EBO
•
Weight : Approximated 0.011 gram
Collector Current — Continuous
I
Rating
Symbol
Method 2026
Collector–Emitter Voltage
V
CEO
Polarity : Indicated by cathode band
Value
40
75
0.031(0.8) Typ.
Unit
Vdc
Vdc
T
A
= 25°C
Maximum Recurrent Peak Reverse Voltage
Thermal Resistance Junction to Ambient
Maximum RMS Voltage
Junction and Storage Temperature
Maximum DC Blocking Voltage
Total
Marking Code
Device Dissipation FR– 5 Board,
Pr
el
12
P
D
20
R
θJA
14
T
J
, T
stg
20
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
THERMAL CHARACTERISTICS
For capacitive load, derate current by 20%
Characteristic
Symbol
FM130-MH
Max
H
RATINGS
SYMBOL
FM120-M
im
V
RRM
V
RMS
V
DC
I
O
13
30
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ina
6.0
Vdc
600
mAdc
Unit
150
14
40
833
21
28
–55 to +150
30
40
15
mW
50
°C/W
35
°C
50
Dimensions in inches and (millimeters)
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Volt
Volt
Volt
Maximum Average Forward Rectified Current
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
MMBT2222AWT1
= P1
DEVICE MARKING
I
FSM
Amp
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise
noted.)
C
J
T
J
TSTG
R
ΘJA
-55
Unit
to +150
℃/W
PF
Operating Temperature Range
Characteristic
-55
Symbol
to +125
Min
Max
℃
OFF CHARACTERISTICS
-
65
to +175
℃
Collector–Emitter Breakdown Voltage (1)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
CHARACTERISTICS
V
(BR)CEO
40
—
Vdc
Volt
0.9
Maximum Forward Voltage at
B
1.0A DC
0.92
V
F
0.50
0.70
0.85
(I
C
= 1.0 mAdc, I = 0)
Collector–Base
Current at @T A=25℃
Maximum Average Reverse
Breakdown Voltage
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Base Cutoff Current
CE
EB
(I
C
= 10
Voltage
Rated DC Blocking
µAdc,
I
E
= 0)
@T A=125℃
I
R
V
(BR)CBO
V
(BR)EBO
75
6.0
—
—
—
—
20
10
0.5
10
Vdc
Vdc
nAdc
nAdc
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
(V = 60 Vdc, V = 3.0 Vdc)
I
BL
I
CEX
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
CE
EB
1. Pulse Test: Pulse Width<300
µs,
Duty Cycle<2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
