WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Featrues
•
High current capability, low forward voltage drop.
High surge capability.
•
We declare that the material of product compliance with RoHS requirements.
Guardring for overvoltage protection.
•
Pb-Free package is available
Ultra
product for packing
•
RoHS
high-speed switching.
code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
for packing code suffix
Lead-free parts meet
of
•
Halogen free product
environmental standards
“H”
MIL-STD-19500 /228
MAXIMUM RATINGS
for packing code suffix "G"
•
RoHS product
Value
Halogen free product for packing code suffix "H"
Rating
Symbol
2907 2907A
Unit
Collector–Emitter Voltage
V
CEO
–40
–60
•
Epoxy : UL94-V0 rated flame retardant
–60
Collector–Base Voltage
V
CBO
•
Case : Molded plastic, SOD-123H
FM120-M
MMBT2907ADW1T1
THRU
FM1200-M
Pb Free Product
PACKAGE
Dual General Purpose Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
0.071(1.8)
0.056(1.4)
4
1
2
Mechanical data
SOT-363
0.040(1.0)
0.024(0.6)
3
Vdc
Vdc
Emitter–Base Voltage
V
solderable per MIL-STD-750
–5.0
Vdc
•
Terminals :Plated terminals,
EBO
,
0.031(0.8) Typ.
(3)
(2)
0.031(0.8) Typ.
(1)
THERMAL CHARACTERISTICS
•
Mounting Position : Any
Method 2026
I
C
Collector Current — Continuous
•
Polarity : Indicated by cathode band
Characteristic
•
Weight : Approximated 0.011 gram
–600
mAdc
Q
1
Dimensions in inches and (millimeters)
Q
2
Max
Unit
mW
Symbol
225
Total Device Dissipation FR– 5 Board, (1)
P
D
MAXIMUM RATINGS AND ELECTRICAL
T
A
= 25°C
Derate above 25°C
1.8
Ratings at 25℃ ambient temperature unless otherwise specified.
Thermal
half wave,
Junction to Ambient
R
load.
556
Single phase
Resistance,
60Hz, resistive of inductive
θJA
CHARACTERISTICS
mW/°C
°C/W
mW
15
50
(4)
(5)
(6)
Maximum RMS Voltage
Total Device Dissipation
For capacitive load, derate current by 20%
Alumina Substrate, (2) T
A
= 25°C
RATINGS
Derate above 25°C
Marking Code
Thermal Resistance, Junction to Ambient
Maximum Recurrent Peak Reverse Voltage
Junction and Storage Temperature
P
D
300
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
R
θJA
V
RRM
T
J
, T
stg
V
RMS
V
DC
I
O
2.4
mW/°C
12
13
14
417
°C/W
40
20
30
–55 to +150
°C
14
21
28
20
30
40
16
Device
60
ORDERING INFORMATION
18
10
80
Marking
100
115
120
Shipping
200
150
150
200
Vo
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
DEVICE MARKING
35
42
MMBT2907ADW1T1
56
50
60
80
1.0
30
105
140
2F
70
3000 Units/Reel
100
Vo
Vo
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
R
ΘJA
C
J
T
J
TSTG
MMBT2907ADW1T1
= 2F
A
Characteristic
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Symbol
OFF CHARACTERISTICS
(I
C
= –10 mAdc, I
B
= 0)
Min
-55 to +125
Max
40
Unit
120
-55 to +150
℃
P
–40
-
65
to +175
Vdc
—
Collector–Emitter Breakdown Voltage(3)
Storage Temperature Range
V
℃
(BR)CEO
℃
MMBT2907
V
(BR)CBO
0.50
V
(BR)EBO
I
CEX
I
CBO
CHARACTERISTICS
MMBT2907A
–60
FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH
—
I
R
Maximum Forward Voltage at 1.0A DC
Collector–Emitter Breakdown Voltage(I
C
= –10
µAdc,
I
E
= 0)
V
F
Emitter–Base Breakdown Voltage(I
E
= –10
µAdc,
I
C
= 0)
Maximum Average Reverse Current at @T A=25℃
Collector Cutoff Current( V
CB
= –30Vdc, I
BE(OFF)
= –0.5Vdc)
@T A=125℃
Rated DC Blocking Voltage
–60
–5.0
—
—
—
—
—
—
—
0.70
—
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector Cutoff Current
( V
CB
= –50Vdc, I
E
= 0)
MMBT2907
MMBT2907A
Vdc
0.85
0.5
Vdc
–50
10
nAdc
µAdc
–0.020
0.9
0.92
Vo
mA
2- Thermal Resistance From Junction to Ambient
–0.010
–20
–10
–50
MMBT2907
MMBT2907A
Base Current( V
CE
= –30Vdc, V
EB(off)
= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
( V
CB
= –50Vdc, I
E
= 0, T
A
=125°C )
I
B
nAdc
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
