WILLAS
General Purpose Transistor
PNP Silicon
•
RoHS product for packing code suffix "G",
•
Weight : 0.008g
Halogen free product for packing code suffix "H" .
MMBT2907LT1
MMBT2907ALT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
V
V
CEO
CBO
EBO
Value
2907 2907A
–40
–60
–5.0
–600
–60
Unit
Vdc
Vdc
Vdc
mAdc
3
COLLECTOR
SOT–23
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
2
EMITTER
R
θJA
P
D
DEVICE MARKING
MMBT2907LT1
= M2B,
MMBT2907AL
T1 = 2F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= –10 mAdc, I
B
= 0)
MMBT2907
MMBT2907A
Collector–Emitter Breakdown Voltage(I
C
= –10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage(I
E
= –10
µAdc,
I
C
= 0)
Collector Cutoff Current( V
CB
= –30Vdc, I
BE(OFF)
= –0.5Vdc)
Collector Cutoff Current
( V
CB
= –50Vdc, I
E
= 0)
MMBT2907
MMBT2907A
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
V
(BR)CEO
Vdc
–40
–60
–60
–5.0
—
—
—
—
—
—
—
—
—
—
–50
–0.020
–0.010
–20
–10
–50
Vdc
Vdc
nAdc
µAdc
MMBT2907
MMBT2907A
Base Current( V
CE
= –30Vdc, V
EB(off)
= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
( V
CB
= –50Vdc, I
E
= 0, T
A
=125°C )
I
B
nAdc
WILLAS [ WILLAS ELECTRONIC CORP ]
