NPN
MMBT3904WT1
FM120-M
THRU
PNP
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
MMBT3906WT1
General Purpose Transistors
WILLAS
SOD-123
PACKAGE
Pb Free Product
Features
•
Batch process design, excellent power dissipation offers
NPN and PNP Silicon
and thermal resistance.
better reverse leakage current
•
Low profile surface mounted application in order to
Package outline
SOD-123H
optimize board space.
These transistors are designed for general purpose amplifier applications. They are housed
•
Low power loss, high efficiency.
the
current capability, low
designed for low
drop.
•
in
High
SOT–323/SC–70 which is
forward voltage
power surface mount applications.
•
High surge capability.
We declare that the material of product compliance with RoHS requirements.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for
chip, metal silicon junction.
•
Silicon epitaxial planar
packing code suffix ”G”
•
Lead-free parts meet environmental standards
suffix “H”
Halogen free product for packing code
of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT– 323
0.071(1.8)
0.056(1.4)
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
0.040(1.0)
0.024(0.6)
DEVICE MARKING AND
Mechanical data
ORDERING INFORMATION
Device
Marking
Package
•
Epoxy : UL94-V0 rated flame retardant
MMBT3904WT1
AM
SOT-323/SC-70
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
MMBT3906WT1
2A
SOT-323/SC-70
Shipping
3000/Tape&Reel
0.031(0.8) Typ.
3000/Tape&Reel
0.031(0.8) Typ.
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS
Rating
Symbol
Value
40
Unit
Vdc
Collector–Emitter Voltage
MMBT3904WT1
V
CEO
Ratings at 25℃ ambient temperature unless otherwise specified.
MMBT3906WT1
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
CBO
– 40
60
– 40
Vdc
1
BASE
3
COLLECTOR
Single phase half wave, 60Hz, resistive
MMBT3904WT1
of inductive load.
Collector–Base Voltage
For capacitive load, derate current by 20%
MMBT3906WT1
RATINGS
Emitter–Base Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
MMBT3904WT1
V
EBO
6.0
Vdc
EMITTER
MMBT3906WT1
– 5.0
Marking Code
12
13
14
15
16
18
10
115
120
MMBT3904WT1
20
30
40
60
80
100
150
200
Maximum Recurrent
Current
Reverse Voltage
MMBT3904WT1
Collector
Peak
— Continuous
I
C
200
mAdc
50
Volts
V
RRM
2
Maximum RMS Voltage
Maximum DC Blocking Voltage
MMBT3906WT1
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
14
20
– 200
21
30
28
40
35
50
42
60
1.0
30
56
80
1
B ASE
3
100
COLLECT OR
150
70
105
140
200
Volts
Volts
Maximum Average Forward Rectified Current
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
2
EMIT T ER
Amps
Typical Thermal Resistance (Note 2)
THERMAL CHARACTERISTICS
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
D
Max
-55 to +125
150
Characteristic
Unit
mW
40
120
Total Device Dissipation (1)
-
65
to +175
MMBT3906WT1
-55 to +150
℃/W
PF
℃
℃
T
A
=25 °C
Thermal Resistance, Junction to Ambient
R
θJA
833
°C/W
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Junction and Storage Temperature
T
J
, T
stg
–55 to +150
°C
Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
R
0.5
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
