FM120-M
THRU
MMBT3906TT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Silicon
PNP
Low profile surface mounted application in order to
optimize board space.
FEATURE
•
Low power loss, high efficiency.
High current capability,
•
Simplifies Circuit Design.
low forward voltage drop.
•
High surge capability.
RoHS product for packing code suffix "G"
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix "H"
•
Ultra high-speed switching.
•
Silicon epitaxial planar
ORDERING INFORMATION
chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Device
Shipping
MIL-STD-19500
Marking
/228
•
RoHS product for packing code suffix "G"
& Reel
MMBT3906TT1
2A
3000/Tape
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-523
Mechanical data
MAXIMUM RATINGS
rated flame retardant
•
Epoxy : UL94-V0
Rating
Symbol
Value
•
Case : Molded plastic, SOD-123H
,
Collector–Emitter Voltage
V
CEO
•
Terminals :Plated terminals, solderable per MIL-STD-750
– 40
V
CBO
V
EBO
I
C
– 40
– 5.0
Unit
Vdc
Vdc
Vdc
mAdc
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Collector–Base
Method 2026
Voltage
Emitter–Base Voltage
•
Polarity : Indicated by cathode band
Collector Current — Continuous
•
Mounting Position : Any
3
COLLECTOR
– 200
1
Dimensions in inches and (millimeters)
BASE
2
EMITTER
•
Weight : Approximated 0.011
THERMAL CHARACTERISTICS
gram
Total Device Dissipation FR– 4 Board(1)
P
D
Ratings at 25℃ ambient temperature unless otherwise specified.
T
A
=25 °C
Single phase half wave, 60Hz, resistive of inductive load.
Derate above 25°C
For capacitive load, derate current by 20%
Thermal Resistance Junction to Ambient
R
θJA
Total Device Dissipation
FR-4 Board (2), T
A
= 25°C
Maximum Recurrent Peak Reverse Voltage
Derate above 25°C
Marking Code
RATINGS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
200
1.6
600
300
13
30
2.4
21
400
mW
mW/°C
°C/W
mW
14
15
40
50
mW/°C
28
°C/W
35
40
°C
50
Characteristic
Symbol
Max
Unit
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
P
D
V
RRM
V
RMS
R
I
O
I
FSM
θJA
12
20
14
16
60
42
60
1.0
30
40
120
Max
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS
Resistance Junction to Ambient
Thermal
Voltage
Maximum DC Blocking Voltage
Junction and Storage Temperature
V
DC
J
, T
stg
20
T
30
–55 to +150
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
DEVICE MARKING
MMBT3906TT1
= 2A
R
ΘJA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Typical Junction Capacitance (Note 1)
C
J
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Characteristic
Unit
to +150
-55
Vdc
OFF CHARACTERISTICS
Storage Temperature Range
T
J
TSTG
-55 to +125
Symbol
Min
-
65
to +175
Collector–Emitter Breakdown Voltage (3)
mAdc, I
B
= 0)
(I
C
= –1.0
CHARACTERISTICS
Maximum
Collector–Base Breakdown Voltage
Forward Voltage at 1.0A DC
Maximum
(I
Average Reverse
E
Current at @T A=25℃
C
= –10
µAdc,
I = 0)
@T A=125℃
Rated DC Blocking Voltage
Emitter–Base Breakdown Voltage
V
(BR)CEO
V
F
I
R
0.50
V
(BR)CBO
0.70
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
– 40
—
– 40
V
(BR)EBO
– 5.0
I
BL
—
I
CEX
—
0.5
—
10
0.85
Vdc
0.9
0.92
Vdc
nAdc
NOTES:
(I
E
= –10
µAdc,
I
C
= 0)
—
– 50
nAdc
– 50
Base Cutoff Current
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
2- Thermal Resistance From Junction to Ambient
Collector Cutoff Current
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
3. Pulse Width <300
µs;
Duty Cycle <2.0%.
2012-11
2012-06
WILLAS
WILLAS ELECTRONIC COR
ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
