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MMBT3906LT1 参数 Datasheet PDF下载

MMBT3906LT1图片预览
型号: MMBT3906LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistors PNP Silicon]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 6 页 / 659 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
2.0
h
FE
, DC CURRENT GAIN (NORMALIZED)
T
J
= +125°C
1.0
0.7
0.5
V
CE
= 1.0 V
+25°C
–55°C
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
=1.0 mA
0.6
10 mA
30 mA
100 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
B
, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.2
1.0
T
J
= 25°C
1.0
V
BE(sat)
@ I
C
/I
B
=10
0.5
V
BE
@ V
CE
=1.0 V
V, VOLTAGE ( VOLTS )
0.8
COEFFICIENT (mV/ °C)
θ
VC
for V
CE(sat)
+25°C TO +125°C
0
–55°C TO +25°C
– 0.5
0.6
+25°C TO +125°C
–1.0
0.4
V
CE(sat)
@ I
C
/I
B
=10
0.2
–55°C TO +25°C
–1.5
θ
VB
for V
BE(sat)
0
1.0
2.0
5.0
10
20
50
100
200
–2.0
0
20
40
60
80
100
120
140
160
180
200
C , COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients