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MMBT3904LT1 参数 Datasheet PDF下载

MMBT3904LT1图片预览
型号: MMBT3904LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistor]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 7 页 / 660 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS  
M MBT3904LT1  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)  
Characteristic  
Symbol  
Min  
Max  
Unit  
ON CHARACTERISTICS (3)  
DC Current Gain(1)  
hFE  
––  
(I C =0.1 mAdc, V CE =1.0 Vdc)  
(I C = 1.0 mAdc, V CE = 1.0 Vdc)  
(I C = 10 mAdc, V CE = 1.0 Vdc)  
(I C = 50mAdc, V CE = 1.0Vdc)  
(I C = 100mAdc, V CE =1.0 Vdc)  
Collector–Emitter Saturation Voltage  
(I C = 10 mAdc, I B = 1.0 mAdc)(3)  
(I C = 50 mAdc, I B = 5.0mAdc)  
Base–Emitter Saturation Voltage(3)  
(I C = 10 mAdc, I B = 1.0mAdc)  
(I C = 50mAdc, I B = 5.0mAdc )  
40  
70  
––  
––  
100  
60  
300  
––  
30  
––  
VCE(sat)  
Vdc  
Vdc  
––  
––  
0.2  
0.3  
V BE(sat)  
0.65  
––  
0.85  
0.95  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)  
Output Capacitance  
f T  
300  
––  
MHz  
C obo  
C ibo  
h ie  
––  
––  
4.0  
8.0  
10  
pF  
pF  
(V CB = 5.0Vdc, I E = 0, f = 1.0 MHz)  
Input Capacitance  
(V BE = 0.5Vdc, I C = 0, f = 1.0 MHz)  
Input Impedancen  
1.0  
0.5  
100  
1.0  
kW  
(V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz)  
Voltage Feedback Ratio  
h re  
8.0  
400  
40  
X10 –4  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
Small–Signal Current Gain  
h fe  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
Output Admittance  
h oe  
NF  
mmhos  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
Noise Figure  
5.0  
dB  
(V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k , f = 1.0 kHz)  
SWITCHING CHARACTERISTICS  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(V CC = 3.0 Vdc,V BE = –0.5Vdc  
I C = 10 mAdc, I B1 = 1.0mAdc)  
(V CC = 3.0Vdc,  
t d  
t r  
t s  
t f  
35  
35  
ns  
ns  
200  
50  
I C = 10 mAdc,I B1 = I B2 = 1.0 mAdc)  
3. Pulse Test: Pulse Width  
<300 µs, Duty Cycle <2.0%.