FM120-M
MMBT4401LT1
THRU
FM1200-M
1.0A
General Purpose
BARRIER RECTIFIERS -20V- 200V
SURFACE MOUNT SCHOTTKY
Transistor
SOD-123
PACKAGE
WILLAS
Pb Free Product
Package outline
Features
Batch process design, excellent power
compliance with
•
•
We declare that the material of product
dissipation offers
RoHS requirements.
better reverse leakage current and thermal resistance.
Pb-Free package is available
•
Low profile surface mounted application in order to
RoHS product for packing code suffix ”G”
optimize board space.
Halogen
loss, high efficiency.
•
Low power
free product for packing code suffix “H”
•
High current capability, low forward voltage drop.
High surge
INFORMATION
•
ORDERING
capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
Device
Marking
Shipping
•
Silicon epitaxial planar chip, metal silicon junction.
MMBT4401LT1
2X
3000/Tape &
of
•
Lead-free parts meet environmental standards
Reel
MIL-STD-19500 /228
RoHS product for packing
•
MAXIMUM RATINGS
code suffix "G"
Halogen free product for packing code suffix "H"
Rating
Symbol
Value
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Unit
Vdc
Vdc
0.031(0.8) Typ.
SOT–23
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
60
Collector–Base Voltage
V
•
Case : Molded plastic, SOD-123H
CBO
,
Emitter–Base Voltage
V
EBO
6.0
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Collector Current — Continuous
I
C
600
Collector–Emitter Voltage
V
CEO
40
0.031(0.8) Typ.
Vdc
mAdc
3
COLLECTOR
•
Polarity : Indicated by cathode band
Mounting
CHARACTERISTICS
•
THERMAL
Position : Any
•
Weight : Approximated 0.011 gram
Characteristic
Dimensions in inches
1
and (millimeters)
BASE
Symbol
Max
Unit
2
EMITTER
225
mW
Total Device Dissipation FR– 5 Board, (1)
P
D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
A
= 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Derate above 25°C
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
For capacitive load, derate current by 20%
Total Device Dissipation
P
D
300
mW
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Alumina Substrate, (2) T
A
= 25°C
Marking Code
12
13
14
15
18
10
115
120
Derate above 25°C
2.4
mW/°C
16
20
θJA
30
40
50
80
100
150
200
Maximum Recurrent Peak Reverse
Junction to Ambient
V
RRM
Volts
Thermal Resistance,
Voltage
R
417
°C/W
60
Maximum RMS Voltage
Junction and Storage Temperature
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
DEVICE MARKING
Peak Forward
MMBT4401LT1
ms single half sine-wave
Surge Current 8.3
= 2X
superimposed on rated load (JEDEC method)
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
14
T
J
, T
stg
20
21
–55 to
28
+150
30
40
35
°C
42
56
70
105
140
Volts
Volts
50
60
1.0
30
80
100
150
200
Amps
Amps
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Symbol
-55 to +125
V
(BR)CEO
V
F
I
R
Typical Junction Capacitance (Note 1)
Characteristic
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
CHARACTERISTICS
(I
C
= 1.0 mAdc, I
B
= 0)
40
120
Max
Unit
-55 to +150
Vdc
℃/W
PF
℃
℃
-
65
to +175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
40
—
Maximum Forward Voltage at
Breakdown Voltage
Collector–Base
1.0A DC
Maximum Average
0.1 mAdc, I
E
= 0)
at @T A=25℃
(I
C
=
Reverse Current
Rated DC Blocking Voltage
Breakdown
@T A=125℃
Emitter–Base
Voltage
V
(BR)CBO
V
(BR)EBO
0.50
0.70
0.85
Vdc
0.5
—
10
0.9
0.92
Volts
60
6.0
I
BEV
—
I
CEX
—
mAmps
Vdc
µAdc
(I
E
= 0.1 mAdc, I
C
= 0)
Base Cutoff Current
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
NOTES:
2- Thermal Resistance From Junction to Ambient
—
0.1
µAdc
0.1
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
