FM120-M
MMBT4403LT1
THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Product
Features
•
Batch process design, excellent power dissipation offers
PNP Silicon
better reverse leakage current and thermal resistance.
optimize board space.
•
RoHS product for packing code suffix "G"
•
Low power loss,
product for packing code suffix "H"
Halogen free
high efficiency.
•
High current capability, low forward voltage drop.
●
•
High surge capability.
•
Guardring for overvoltage
ORDERING INFORMATION
protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Device
Marking
Shipping
•
Lead-free parts meet environmental standards of
MMBT4403LT1
/228
2T
3000/Tape & Reel
MIL-STD-19500
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Package outline
SOD-123H
•
Low profile surface mounted application in order to
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
Unit
Vdc
0.031(0.8) Typ.
Vdc
Vdc
mAdc
Dimensions in inches and (millimeters)
1
BASE
0.040(1.0)
0.024(0.6)
Mechanical data
MAXIMUM RATINGS
•
Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Collector–Emitter Voltage
V
CEO
– 40
•
Case : Molded plastic, SOD-123H
,
Collector–Base Voltage
V
CBO
•
Terminals :Plated terminals, solderable per MIL-STD-750
– 40
•
•
Mounting Position : Any
THERMAL CHARACTERISTICS
•
Weight : Approximated 0.011 gram
Characteristic
Emitter–Base Voltage
Method 2026
Collector Current — Continuous
Polarity : Indicated by cathode band
V
EBO
0.031(0.8) Typ.
– 5.0
3
COLLECTOR
I
C
– 600
Symbol
P
Max
225
Unit
mW
Total Device Dissipation FR –5 Board (1)
T
A
=25 °C
Ratings at 25℃ ambient temperature unless otherwise specified.
Derate above 25°C
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
556
°C/W
Thermal Resistance Junction to Ambient
R
θJA
For capacitive load, derate current by 20%
Total Device Dissipation
P
D
300
mW
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Alumina Substrate (2) T
A
= 25°C
Marking Code
12
13
2.4
14
mW/°C
15
16
18
10
115
120
Derate above 25°C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
Storage Temperature
V
RMS
T , T
Junction and
–55 to +150
°C
J
stg
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
Maximum Average Forward Rectified Current
DEVICE MARKING
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2
EMITTER
I
O
I
FSM
MMBT4403LT1
= 2T
1.0
30
Amps
℃/W
PF
℃
℃
Amps
25°C
Typical
ELECTRICAL CHARACTERISTICS
(T
A
=
R
ΘJA
unless otherwise noted)
Thermal Resistance (Note 2)
Typical Junction Capacitance (Note
Characteristic
1)
OFF CHARACTERISTICS
Operating Temperature Range
C
J
T
J
Symbol
-55 to +125
V
(BR)CEO
Min
40
Max
120
Unit
-55 to +150
-
65
to +175
Collector–Emitter Breakdown Voltage (3)
TSTG
Storage Temperature Range
Vdc
(I
C
= –1.0 mAdc, I
B
= 0)
CHARACTERISTICS
Collector–Base Breakdown Voltage
Maximum Forward Voltage at 1.0A DC
(I
C
= –0.1mAdc, I
E
= 0)
Maximum Average Reverse Current at @T A=25℃
Emitter–Base Breakdown Voltage
Rated DC Blocking
–0.1mAdc, I
C
= 0)
@T A=125℃
(I
E
=
Voltage
– 40
V
F
I
R
0.50
—
—
0.5
10
—
0.85
0.9
0.92
FM1100-MH
FM1150-MH
FM1200-MH
UNIT
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Vdc
V
(BR)CBO
–
0.70
40
– 5.0
Volts
V
(BR)EBO
I
BEV
—
I
CEX
—
Vdc
µAdc
mAmp
Base Cutoff Current
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector Cutoff Current
2- Thermal Resistance From Junction to Ambient
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
NOTES:
– 0.1
µAdc
– 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
