FM120-M
THRU
MMBT4403WT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
Pb Free Produ
Features
•
Batch process design, excellent power dissipation offers
PNP Silicon
leakage current and thermal resistance.
better reverse
•
Low profile surface mounted application in order to
Package outline
SOD-123H
optimize board
material
•
We declare that the
space.
of product compliance with RoHS requirements.
•
Low power loss, high efficiency.
package is available
•
Pb-Free
current capability, low forward voltage drop.
•
High
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
RoHS product
capability.
•
High surge
for packing code suffix ”G”
•
Guardring
product for packing code
Halogen free
for overvoltage protection.
suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
3
0.071(1.8)
0.056(1.4)
1
2
ORDERING INFORMATION
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Device
Marking
Shipping
MMBT4403WT1
2T
3000/Tape & Reel
•
Epoxy : UL94-V0 rated flame retardant
SOT-323
0.040(1.0)
0.024(0.6)
Mechanical data
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
MAXIMUM RATINGS
Rating
Method 2026
•
Polarity :
Voltage
Collector–Emitter
Indicated by cathode band
Collector–Base Voltage
•
Mounting Position : Any
Emitter–Base Voltage
•
Weight : Approximated 0.011 gram
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 40
– 40
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
Dimensions in inches and (millimeters)
1
BASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature
THERMAL CHARACTERISTICS
unless otherwise specified.
2
EMITTER
Maximum RMS Voltage
Single phase half wave, 60Hz, resistive of inductive load.
Characteristic
Symbol
Max
Unit
For capacitive load, derate current by 20%
Total Device Dissipation FR−5 Board
P
D
150
mW
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
T
A
= 25°C
Marking Code
12
13
14
15
16
18
10
115
120
Thermal Resistance,
R
qJA
833
°C/W
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Junction−to−Ambient
Junction and Storage Temperature
T
J
, T
stg
14
V
RMS
−55 to +150
20
V
DC
I
O
I
FSM
R
ΘJA
T
J
21
°C
30
28
35
42
56
70
105
140
40
50
60
1.0
30
80
100
150
200
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
DEVICE MARKING
Peak Forward Surge Current 8.3 ms single half sine-wave
MMBT4403WT1
= 2T
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
-55 to +125
Symbol
Typical Junction
CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
C
J
ELECTRICAL
Capacitance (Note 1)
Storage Temperature Range
OFF CHARACTERISTICS
Operating Temperature Range
Characteristic
TSTG
40
120
-55 to +150
Min
Max
Unit
-
65
to +175
Vdc
Vdc
Vdc
µAdc
—
Collector–Emitter Breakdown Voltage (3)
Maximum Forward Voltage at 1.0A DC
(I
C
= –1.0 mAdc, I
B
= 0)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Collector–Base Breakdown Voltage
Maximum Average Reverse Current at @T A=25℃
(I
C
= –0.1mAdc, I
E
= 0)
@T
Rated DC Blocking Voltage
Emitter–Base Breakdown Voltage
A=125℃
V
F
I
R
0.50
– 40
0.70
0.85
0.9
0.92
– 40
– 5.0
I
BEV
—
I
CEX
—
—
—
– 0.1
0.5
10
(I
NOTES:
E
= –0.1mAdc, I
C
= 0)
(V
= –35 Vdc, V
Base
at 1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured
Cutoff Current
CE
EB
2- Thermal Resistance From Junction to Ambient
= –0.4 Vdc)
Collector Cutoff Current
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
µAdc
– 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
