WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
FEATURE
optimize board space.
We declare that the material of product compliance with RoHS requirements.
•
Low power loss, high efficiency.
High current capability, low forward voltage drop.
•
Pb-Free package is available
High
product for packing code suffix ”G”
•
RoHS
surge capability.
Guardring for overvoltage protection.
•
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial
AND
chip, metal silicon junction.
DEVICE MARKING
planar
ORDERING INFORMATION
•
Lead-free parts meet environmental standards of
Device
Shipping
MIL-STD-19500 /228
Marking
RoHS product for packing code suffix "G"
•
MMBT5551DW1T1
G1
3000/Tape&Reel
Halogen free product for packing code suffix "H"
FM120-M
MMBT5551DW1T1
THRU
FM1200-M
Pb Free Product
PACKAGE
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
Features
Package outline
SOD-123H
6
0.146(3.7)
0.130(3.3)
5
0.012(0.3) Typ.
4
1
2
3
0.071(1.8)
0.056(1.4)
SOT-363/SC-88
Mechanical data
MAXIMUM RATINGS
: UL94-V0 rated flame retardant
•
Epoxy
Rating
Symbol
Value
Unit
•
Case : Molded plastic, SOD-123H
Collector–Emitter Voltage
V
CEO
140
,
Vdc
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Base Voltage
V
CBO
Method 2026
•
Emitter–Base Voltage
by cathode
V
EBO
Polarity : Indicated
band
160
6.0
600
Vdc
Vdc
mAdc
C
2
0.031(0.8) Typ.
B
1
0.040(1.0)
E
1
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
E
C
B
2
2
1
Mounting Position : Any
•
Collector Current — Continuous I
C
•
Weight Approximated 0.011 gram
THERMAL
:
CHARACTERISTICS
Characteristic
MAXIMUM
Symbol
Max
Unit
RATINGS AND ELECTRICAL CHARACTERISTICS
Total Device Dissipation FR–
unless otherwise specified.
Ratings at 25℃ ambient temperature
5 Board, (1)
P
D
225
mW
T
A
=
half wave, 60Hz, resistive of inductive load.
Single phase
25°C
Derate above 25°C
1.8
mW/°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
RATINGS
Total Device Dissipation
mW
P
D
Marking Code
12
13
300
14
15
16
18
10
115
120
Alumina Substrate, (2) T
A
= 25°C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
V
RRM
Derate above 25°C
2.4
mW/°C
Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
Thermal Resistance, Junction to Ambient
V
RMS
R
θJA
417
°C/W
Vo
Maximum
Junction and
Voltage
Temperature
DC Blocking
Storage
30
to +150
40
50
60
80
100
150
200
V
DC
T
J
,
20
stg
T
–55
°C
Am
Maximum Average Forward Rectified Current
I
O
1.0
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Peak Forward Surge Current 8.3 ms single half sine-wave
30
Unit
I
FSM
Am
Characteristic
Symbol
Min
Max
superimposed on rated load (JEDEC method)
OFF CHARACTERISTICS
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Voltage(3)
Collector–Emitter Breakdown
Operating
(I = 1.0 mAdc, I = 0)
Temperature Range
Storage Temperature Range
C
B
R
ΘJA
C
J
T
J
TSTG
-55 to +125
(BR)CEO
40
120
-55 to +150
℃
P
160
—
Vdc
-
65
to +175
Vdc
℃
℃
Collector–Base Breakdown Voltage
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC
(I
Blocking Voltage
E
V
V
F
I
R
0.50
(I
C
= 100
µAdc,
I
E
= 0)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
(BR)CBO
180
—
0.70
—
0.85
0.9
0.92
Vo
Emitter–Base Breakdown Voltage
= 10
µAdc,
I
C
= 0)
V
(BR)EBO
0.5
@T A=125℃
6.0
—
—
10
Vdc
mA
Collector Cutoff Current
(
at 1
= 120Vdc, I
E
= 0)
1- Measured
V
CB
MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
2- Thermal Resistance From Junction to Ambient
I
CBO
V
50
50
50
nAdc
µAdc
nAdc
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 °C)
I
EBO
Emitter Cutoff Current
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
—
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
