FM120-M
MMBT555xLT1
THRU
High
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE
Voltage Transistors
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
AND ORDERING INFORMATION
DEVICE MARKING
•
Low power loss, high efficiency.
Device
Marking
Shipping
•
High current capability, low forward voltage drop.
•
High surge capability.
MMBT5550LT1
M1F
3000/Tape&Reel
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
MMBT5551LT1
3000/Tape&Reel
metal silicon junction.
•
Silicon epitaxial planar chip,
G1
•
Lead-free parts meet environmental standards of
MAXIMUM RATINGS
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Rating
Symbol
Value
Halogen free product for packing code suffix "H"
Collector - Emitter Voltage
V
CEO
Mechanical data
MMBT5550
140
MMBT5551
160
•
Epoxy : UL94-V0 rated flame retardant
Collector - Base Voltage
V
CBO
•
Case : Molded plastic, SOD-123H
160
MMBT5550
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
MMBT5551
180
SOD-123H
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
FEATURE
We declare that the material of product
Typ.
0.130(3.3)
0.012(0.3)
compliance with RoHS requirements.
Pb-Free package is available
RoHS product for packing code suffix ”G”
0.071(1.8)
Halogen free product for packing code suffix “H”
0.056(1.4)
0.146(3.7)
Unit
Vdc
0.040(1.0)
0.024(0.6)
Vdc
0.031(0.8) Typ.
SOT–23
0.031(0.8) Typ.
•
•
•
THERMAL CHARACTERISTICS
Weight : Approximated 0.011 gram
Characteristic
Method 2026
Emitter - Base Voltage
Polarity : Indicated by cathode band
Collector Current - Continuous
Mounting Position : Any
V
EBO
I
C
6.0
600
Vdc
mAdc
Dimensions in inches and (millimeters)
3
COLLECTOR
Total Device Dissipation FR– 5 Board, (1)
225
mW
Ratings at 25℃ ambient temperature unless otherwise specified.
P
D
2
T
A
= 25°C
EMITTER
Single phase half wave, 60Hz, resistive of inductive load.
Derate above 25°C
1.8
mW/°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Total Device Dissipation
300
mW
P
D
Marking Code
Alumina Substrate, (2) T
A
= 25°C
12
13
14
15
16
18
10
115
120
20
30
40
50
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Derate above 25°C
2.4
mW/°C
60
Thermal Resistance, Junction to Ambient
V
RMS
Maximum RMS Voltage
Maximum DC
Junction and Storage Temperature
Blocking Voltage
Maximum Average Forward Rectified Current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
1
BASE
V
DC
I
FSM
R
14
θJA
T
J
, T
stg
20
21
417
28
+150
30
–55 to
40
°C/W
35
50
°C
42
60
1.0
Max
30
40
120
56
80
70
100
105
150
140
200
Volts
Volts
O
ELECTRICAL CHARACTERISTICS
(T
A
=
I
25°C unless otherwise noted.)
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Characteristic
Symbol
Min
Unit
℃/W
PF
℃
℃
Amps
OFF CHARACTERISTICS
Typical Thermal Resistance (Note 2)
Operating Temperature Range
B
= 0)
(I
C
= 1.0 mAdc, I
Storage Temperature Range
R
ΘJA
C
J
T
J
MMBT5550
TSTG
MMBT5551
Typical Junction Capacitance (Note 1)
Collector–Emitter Breakdown Voltage(3)
V
(BR)CEO
-55 to +125
V
(BR)CBO
140
160
—
-
—
65
to +175
Vdc
Vdc
-55 to +150
Collector–Base Breakdown Voltage
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking
10
µAdc,
I
C
= 0)
(I
E
=
Voltage
NOTES:
CHARACTERISTICS
(I
C
= 100
µAdc,
I
E
= 0)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
MMBT5550
160
—
Maximum Average Reverse
Breakdown
@T A=25℃
Emitter–Base
Current at
Voltage
V
F
MMBT5551
I
R
0.50
180
6.0
0.70
—
0.85
0.9
0.92
Volts
@T A=125℃
V
(BR)EBO
0.5
—
10
100
50
100
50
50
Vdc
mAmp
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector Cutoff Current
( V
CB
= 100Vdc, I
E
= 0)
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
I
EBO
—
—
—
—
—
nAdc
µAdc
nAdc
2- Thermal Resistance From Junction to Ambient
( V
CB
= 120Vdc, I
E
= 0)
( V
CB
= 100Vdc, I
E
= 0, T
A
=100 °C)
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 °C)
Emitter Cutoff Current
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
