200mA
Surface Mount
Switching Diode
-
70V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Package
SOD-323
RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
FM120-M
THRU
MMDL6050
FM1200-M
Pb Free Produc
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
FETURE
optimize board space.
Ordering Information
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Device
Marking
Shipping
Halogen free product for packing code suffix "H"
MMDL6050
3000/Tape&Reel
Mechanical data
5A
•
Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS
•
Case : Molded plastic, SOD-123H
Rating
Symbol
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Reverse Voltage
V
R
•
•
Mounting Position : Any
THERMAL CHARACTERISTICS
•
Weight : Approximated 0.011 gram
Characteristic
Method 2026
Forward Current
Polarity :
Forward Surge Current
band
Peak
Indicated by cathode
•
Low power loss, high
is available
Pb-Free package
efficiency.
•
High current capability, low forward voltage drop.
RoHS product for packing code suffix ”G”
•
High surge capability.
for packing code suffix “H”
Halogen free product
•
Guardring for
Sensitivity Level 1
Moisture
overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-323
Polarity: Color band denotes cathode end
1
CATHODE
0.031(0.8) Typ.
Value
Unit
70
Vdc
2
ANODE
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
I
F
I
FM(surge)
200
500
mAdc
Dimensions in inches and (millimeters)
mAdc
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,*
P
D
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
mW
T
A
= 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Derate above 25°C
1.57
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance Junction to Ambient
R
θJA
635
°C/W
For capacitive load, derate current by 20%
Junction and Storage Temperature
T
J
, T
stg
150
°C
Marking Code
**FR-4 Minimum Pad
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
DEVICE MARKING
MMDL6050 = 5A
V
RRM
V
RMS
12
20
14
13
30
21
14
40
28
15
50
35
50
16
60
42
60
1.0
Unit
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
20
30
40
V
DC
ELECTRICAL
Rectified Current
Maximum Average Forward
CHARACTERISTICS
(T
A
=
O
I
25°C unless otherwise noted)
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
Characteristic
OFF
rated load (JEDEC method)
superimposed on
CHARACTERISTICS
I
FSM
Symbol
V
(BR)
Min
Max
Typical Thermal
Reverse Breakdown Voltage (I
(BR)
= 100
µAdc)
Resistance (Note 2)
R
ΘJA
Typical Junction
Reverse Voltage Leakage Current
Capacitance (Note 1)
C
J
Operating Temperature Range
(V
R
= 50 Vdc)
T
J
I
R
—
-55 to +125
V
F
70
—
0.1
0.7
4.0
2.5
Vdc
40
120
µAdc
-
65
Vdc
to +175
-55 to +150
Storage Temperature Range
Forward Voltage
TSTG
Maximum Forward Voltage at 1.0A DC
Reverse Recovery Time
(I
F
= 1.0 mAdc)
CHARACTERISTICS
(I
F
= 100 mAdc)
0.55
V
F
I
R
FM140-MH
1.1
FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
SYMBOL
FM120-MH
FM130-MH
0.85
Maximum Average
= I
R
= 10
Current at
R(REC)
= 1.0 mAdc) (Figure 1)
(I
F
Reverse
mAdc, I
@T A=25℃
t
rr
C
0.50
—
0.70
ns
0.85
0.9
0.92
0.5
10
@T
Rated DC Blocking Voltage
(V
R
= 0 V)
A=125℃
Capacitance
—
pF
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.