200mA
Surface Mount
Switching Diode
-
100V
1.0A SURFACE MOUNT SCHOTTKY
SOD-323
RECTIFIERS -20V- 200V
BARRIER
Package
SOD-123
PACKAGE
WILLAS
FM120-M
MMDL914
FM1200-M
THRU
Pb Free Product
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FETURE
•
High surge capability.
Guardring for overvoltage protection.
•
Pb-Free package is available
Ultra
product for packing
•
RoHS
high-speed switching.
code suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
•
Halogen free product for packing code suffix “H”
Lead-free parts meet
Level 1
•
Moisture Sensitivity
environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
ORDERING INFORMATION
packing code suffix "H"
Halogen free product for
Device
Package
flame retardant
•
Epoxy : UL94-V0 rated
SOD-323
MMDL914
•
Case : Molded plastic, SOD-123H
SOD-123H
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Shipping
3000/Tape&Reel
SOD- 323
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity:
Color band denotes cathode end
0.031(0.8) Typ.
MAXIMUM RATINGS
terminals, solderable per MIL-STD-750
•
Terminals :Plated
Rating
Method 2026
Reverse Voltage
•
Polarity : Indicated by cathode band
Forward Current
•
Mounting Position : Any
Peak Forward Surge Current
•
Weight : Approximated 0.011 gram
Symbol
V
R
I
F
I
FM(surge)
,
Value
100
200
500
1
2
Unit
CATHODE
ANODE
Vdc
Dimensions in inches and (millimeters)
mAdc
mAdc
THERMAL CHARACTERISTICS
MAXIMUM
Characteristic
RATINGS AND ELECTRICAL
Symbol
Ratings at 25℃ ambient temperature unless otherwise specified.
Total Device Dissipation FR-5 Board,*
P
D
CHARACTERISTICS
Max
Unit
200
mW
Single phase half wave, 60Hz, resistive of inductive load.
T
A
= 25°C
For capacitive load,
25°C
current by 20%
Derate above
derate
Thermal Resistance Junction to Ambient
RATINGS
Junction and Storage Temperature
Marking Code
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
**FR-4 Minimum Pad
1.57
mW/°C
R
θJA
635
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
T
J
, T
stg
12
150
°C
15
13
14
16
18
10
115
120
20
30
40
50
60
80
100
150
200
V
V
RRM
V
RMS
V
DC
I
O
I
FSM
14
20
21
30
28
40
35
50
42
60
1.0
30
40
120
56
80
70
100
105
150
140
200
V
DEVICE MARKING
Maximum DC Blocking Voltage
MMDL914
= 5D
Maximum Average Forward Rectified Current
V
A
ELECTRICAL
Current 8.3 ms single half sine-wave
Peak Forward Surge
CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
superimposed on rated load (JEDEC method)
Characteristic
Symbol
Min
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage
(I
R
= 100
µAdc)
Temperature Range
OFFCHARACTERISTICS
R
ΘJA
C
J
T
J
TSTG
Max
Unit
A
V
(BR)
I
R
—
5.0
0.50
4.0
1.0
4.0
µAdc
0.70
pF
Vdc
ns
-55 to +125
100
—
-55 to +150
℃
Reverse Breakdown
Operating Temperature Range
Voltage
Vdc
-
65
to +175
Reverse Voltage Leakage Current
(V
R
= 20Vdc)
CHARACTERISTICS
(V
Forward Voltage at 1.0A DC
= 75Vdc)
Maximum
R
Diode Voltage
Maximum Average Reverse Current at @T A=25℃
(V
R
=0, f =1.0MHz
@T A=125℃
Rated DC Blocking Voltage
)
Forward Voltage
—
25
nAdc
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
0.85
0.5
10
0.9
0.92
V
C
T
V
F
—
—
—
m
NOTES:
(I
F
= 10 mAdc)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse Recovery Time
2- Thermal
F
Resistance From Junction to Ambient
(I = I
R
= 10 mAdc ) (Figure 1)
t
rr
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
