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MSEMF3V3LCC 参数 Datasheet PDF下载

MSEMF3V3LCC图片预览
型号: MSEMF3V3LCC
PDF下载: 下载PDF文件 查看货源
内容描述: 低电容四阵列的ESD保护 [Low Capacitance Quad Array for ESD Protection]
分类和应用:
文件页数/大小: 4 页 / 675 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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Low Capacitance Quad Array for ESD Protection
WILLAS
FM120-M
MSEMF3V3LCC
THRU
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
General
profile surface mounted application in order to
Features
Low
Description
optimize board
transient voltage suppressor
This integrated
space.
Low power loss, high efficiency.
device
High current capability, low forward voltage drop.
(TVS) is designed for applications requiring
High surge capability.
transient overvoltage protection, printers, business
Guardring for overvoltage
systems, medical
machines, communication
protection.
Ultra high-speed switching.
equipment, and other applications.
silicon junction.
Silicon epitaxial planar chip, metal
Its integrated
provides
meet
effective
standards of
design
Lead-free parts
very
environmental
and reliable
MIL-STD-19500 /228
protection
product for packing
lines
suffix "G"
only one
RoHS
for separate
code
using
Halogen free
devices are ideal
suffix "H"
package. These
product for packing code
for situations
better reverse leakage current and thermal resistance.
Four Separate Unidirectional Configurations for
Protection
Power Dissipation: 380mW
Small SOT-563 SMT Package
Low Capacitance
Complies to USB 1.1 Low Speed & Speed
Specifications
These are Pb-Free Devices
Pb-Free package is available
0.031(0.8) Typ.
0.031(0.8) Typ.
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
0.040(1.0)
0.024(0.6)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Low Leakage Current < 1
μA
@ 3Volts
0.071(1.8)
0.056(1.4)
where board space is at a premium.
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Applications
Terminals :Plated terminals, solderable per MIL-STD-750
Serial and Parallel
2026
Method
Ports
Microprocessor Based Equipment
Polarity : Indicated by cathode band
Notebooks, Desktops, Servers
Mounting Position : Any
Weight Approximated 0.011 gram
Cellular
:
and Portable Equipment
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
Mechanical data
Complies with the following standards
Dimensions in inches and (millimeters)
15 kV (air discharge)
IEC61000-4-2
Level 4
8 kV(contact discharge)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
 
Functional diagram
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Maximum Ratings
SOT-563
 
 
-55 to +125
40
120
 
-55 to +150
 
-
65
to +175
 
(T
A
=25°C)
Symbol
P
Forward Voltage at 1.0A DC
Peak Power Dissipation(8×20μs@T
A
=25℃)
Maximum
PK
V
F
Rated DC Blocking Voltage
 
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Parameter
I
R
Value
25
380
327
3.05
150
Units
W
mW
℃/W
0.50
0.70
0.5
10
0.85
0.9
0.92
 
Maximum
D
P
Average Reverse Current at
Power-1 Diode
Steady State
@T A=25℃
@T A=125℃
m
NOTES:
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Above 25℃,
Derate
Maximum Junction Temperature
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Mw/℃
 
 
2- Thermal Resistance From Junction to Ambient
T
Jmax
T
L
T
J
T
stg
Operation Junction and Storage Temperature Range
Lead Solder Temperature(10 seconds duration)
-55 to +150
260
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP