WILLAS
Low Capacitance Quad Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
FM120-M
MSEMFxxLC
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
General
profile surface mounted application in order to
Features
•
Low
Description
optimize board
transient voltage suppressor
This integrated
space.
•
Low power loss, high efficiency.
device (TVS) is designed for applications requiring
•
High current capability, low forward voltage drop.
•
High surge capability.
transient overvoltage protection, printers, business
•
Guardring for overvoltage protection.
machines, communication systems, medical
•
Ultra high-speed switching.
equipment, and other applications.
silicon junction.
•
Silicon epitaxial planar chip, metal
Its integrated
•
Lead-free parts meet
effective
standards of
design provides very
environmental
and reliable
better reverse leakage current and thermal resistance.
Four Separate Unidirectional Configurations for
Protection
Power Dissipation: 380mW
Small SOT-553 SMT Package
Low Capacitance
Complies to USB 1.1 Low Speed & Speed
Specifications
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Low Leakage Current < 1
μA
@ 3Volts
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
protection
product for packing
lines
suffix "G"
only one
RoHS
for separate
code
using
•
Halogen free
devices are ideal
suffix "H"
package. These
product for packing code
for situations
0.040(1.0)
Pb-Free package is available
where board space is at a premium.
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
Halogen free product for packing code suffix “H”
Applications
•
Terminals :Plated terminals, solderable per MIL-STD-750
Serial and Parallel
2026
Method
Ports
Complies with the following standards
Mechanical data
Microprocessor Based Equipment
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Servers
Notebooks, Desktops,
•
Weight :
and Portable
0.011 gram
Cellular
Approximated
Equipment
IEC61000-4-2
Level 4
Dimensions in inches and (millimeters)
15 kV (air discharge)
8 kV(contact discharge)
MAXIMUM RATINGS AND ELECTRICAL
MIL STD 883E - Method 3015-7 Class 3
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
25 kV HBM (Human Body Model)
Functional diagram
RATINGS
Marking Code
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Maximum Ratings
SOT-553
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
(T
A
=25°C)
Symbol
CHARACTERISTICS
P
Forward Voltage at 1.0A DC
Dissipation(8×20μs@T
A
=25℃)
Peak Power
Maximum
PK
V
F
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Parameter
I
R
Value
25
380
327
3.05
150
Units
W
mW
℃/W
0.50
0.70
0.5
10
0.85
0.9
0.92
V
Maximum Average Reverse Current at
Power-1 Diode
P
Steady State
@T A=25℃
D
R
θ
JA
NOTES:
T
Thermal Resistance, Junction-to-Ambient
Above 25℃,
Derate
Maximum Junction Temperature
@T A=125℃
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Mw/℃
℃
℃
℃
Jmax
2- Thermal Resistance From Junction to Ambient
T
J
T
stg
T
L
Operation Junction and Storage Temperature Range
Lead Solder Temperature(10 seconds duration)
-55 to +150
260
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP