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MURS160-FN3 参数 Datasheet PDF下载

MURS160-FN3图片预览
型号: MURS160-FN3
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0A表面装载超快速整流器 - 600V [1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V]
分类和应用:
文件页数/大小: 3 页 / 293 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号MURS160-FN3的Datasheet PDF文件第2页浏览型号MURS160-FN3的Datasheet PDF文件第3页  
1.0A
SURFACE MOUNT
ULTRA
FAST RECTIFIERS
-
600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
mFN-323
PACKAGE
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
MURS160-FN3
FM1200-M
Pb Free Product
THRU
Features
Package outline
SOD-123H
Features
 
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
PARAMETER
Maximum RMS Voltage
Maximum ratings and Electrical
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH
unless otherwise
FM1150-MH FM1200-MH
UNIT
SYMBOL
Characteristics
(AT T =25 C
FM180-MH FM1100-MH
noted)
RATINGS
o
A
im
i
V
RRM
V
RMS
I
O
12
13
CONDITIONS
14
20
30
40
14
21
28
15
50
35
R
ΘJA
C
J
T
J
TSTG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Pr
el
na
42
60
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Mechanical data
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
Method 2026
Epoxy:UL94-V0 rated flame retardant
Polarity : Indicated by cathode band
Case : mFN-323
Mounting Position : Any
Mounting Position : Any
0.011 gram
Weight : Approximated
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
ry
I
O
56
0.103(2.60)
0.095(2.40)
0.026(0.65)
0.014(0.35)
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
Forward rectified current
See Fig.2
16
Symbol MIN.
10
TYP.
115
18
MAX.
120
UNIT
60
80
100
150
200
Volts
70
100
105
1.0
0.026(0.66)
0.022(0.56)
Mechanical data
0.056(1.40)
0.048(1.20)
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
Low
profile surface mounted
forward voltage drop.
to
High current capability, low
application in order
optimize board
capability.
High surge
space.
Guardring for overvoltage protection.
mini Flat No-Lead Package.
Ultra high-speed switching.
Glass passivated chip junction.
Silicon epitaxial
available
Pb-Free package is
planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix “H”
Halogen free product for
cathode end
Polarity:
Color band denotes
packing code suffix "H"
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
mFN-323
0.044(1.10)
0.036(0.90)
0.071(1.8)
0.056(1.4)
0.017(0.43)
0.013(0.33)
140
A
Volts
Volts
Amps
Maximum DC Blocking Voltage
Forward surge current
 
Maximum Average Forward Rectified Current
8.3ms single half sine-wave superimposed on
20
30
40
50
V
DC
rate load (JEDEC methode)
I
FSM
80
1.0
 
I
R
30
C
J
40
STG
120
150
30
200
A
Reverse current
V
R
= V
 
RRM
T
J
= 25
O
C
Peak Forward Surge
junction capacitance
Typical Diode
Current 8.3 ms single half sine-wave
I
FSM
applied 4V DC reverse voltage
f=1MHz and
superimposed on rated load (JEDEC method)
5.0
25
μA
 
pF
Amps
+175
O
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Storage temperature
 
T
 
-65
 
-55 to +125
 
-55 to +150
C
℃/W
PF
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.85
0.9
0.92
Volts
mAmps
I
R
 
*1 Maximun Repetitive peak reverse voltage
0.5
NOTES:
SYMBOLS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
*1
V
RRM
(V)
V
RMS
*2
(V)
*3
V
R
(V)
*4
V
F
(V)
1.25
*5
t
rr
(ns)
50
Operating
temperature
T
J
, (
O
C)
-55 to +150
10
*2 Maximun RMS voltage
*3 Maximun DC Blocking Voltage
*4 Maximum forward voltage@I
F
=1.0A,T
J
=25°C
*5 Maximum Reverse recovery time, note 1
 
 
2- Thermal Resistance From Junction to Ambient
MURS160-FN3
600
420
600
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2012-06
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.