SCS520CS-30T5G
100mA
Surface Mount Schottky Barrier Rectifiers -
30V
-20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-923 Package
SOD-123
PACKAGE
Pb Free Product
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Applications
•
High current capability, low forward voltage drop.
•
High surge capability.
Low current rectification
•
Guardring for overvoltage protection.
Features
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal
type. (SOD-923)
Extremelysmall surface mounting
silicon junction.
•
Lead-free parts meet environmental standards of
Low I
R.
MIL-STD-19500 /228
High reliability.
packing code suffix "G"
•
RoHS product for
Halogen free product
material
code suffix "H"
We declare that the
for packing
of product
SOD-123H
WILLAS
FM120-M
THRU
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
0.056(1.4)
0.071(1.8)
2
Mechanical data
compliance with RoHS requirements.
Pb-Free package is available
•
Epoxy : UL94-V0 rated flame retardant
RoHS product for packing code suffix ”G”
•
Case : Molded plastic, SOD-123H
Halogen free product for packing code suffix “H”
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity : Indicated by cathode band
Silicon epitaxial planar
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Device
Marking
SOD-923
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Construction
Method 2026
1
Cathode
Dimensions in inches and (millimeters)
2
Anode
Device Marking And Ordering Inf ormation
Shipping
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
Limits
Unit
For capacitive load, derate current by 20%
DC reverse voltage
V
R
30
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Mean rectifying current
I
O
100
mA
Marking Code
12
13
mA
14
15
16
18
10
115
120
Peak forward surge current
I
FSM
500
20
30
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Junction temperature
T
j
125
°C
40
Storage temperature
T
RMS
-40~+125
21
°C
28
14
35
42
56
70
105
140
Maximum RMS Voltage
V
s t g
Maximum DC Blocking Voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
520CS-30T5G
E
8000/Tape&Reel
Ratings at 25℃ ambient temperature unless otherwise specified.
Maximum Ratings
(T = 25
°
C)
A
Electrical Characteristics
(
T
Maximum Average Forward Rectified Current
A
= 25
°C
)
V
DC
20
30
40
50
60
80
100
150
200
I
O
Parameter
Symbol
Min.
Peak Forward Surge Current 8.3 ms single half sine-wave
Forward voltage
V
F
I
FSM
-
superimposed on rated load (JEDEC method)
Typ
-
-
-
Max.
0.45
Unit
V
V
µA
1.0
Conditions
I
F
=10mA
30
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Forward voltage
V
F
I
R
Reverse current
R
ΘJA
C
J
T
J
O
-
-
0.50
0.5
Electrical characteristic curves
(Ta=25 C)
Storage Temperature Range
TSTG
-55 to +125
I
F
=20mA
40
V
R
=10V
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum
0.3
Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0A
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T
Io
A=125℃
0.50
0.3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
0.2
DC
D=1/2
0.1
Sin(θ＝180)
0
Io
t
T
VR
D=t/T
VR=15V
Tj=150℃
0.70
0.5
10
0.85
0.9
0.92
I
R
VR
D=t/T
0.2
VR=15V
DC
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
T Tj=150℃
0V
NOTES:
t
2- Thermal Resistance From Junction to Ambient
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
