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SCS521CS-30T5G 参数 Datasheet PDF下载

SCS521CS-30T5G图片预览
型号: SCS521CS-30T5G
PDF下载: 下载PDF文件 查看货源
内容描述: 百毫安表面贴装肖特基整流器 - 30V [100mA Surface Mount Schottky Barrier Rectifiers - 30V]
分类和应用:
文件页数/大小: 3 页 / 405 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号SCS521CS-30T5G的Datasheet PDF文件第2页浏览型号SCS521CS-30T5G的Datasheet PDF文件第3页  
SCS521CS-30T5G
100mA
Surface Mount Schottky Barrier Rectifiers -
30V
-20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-923 Package
PACKAGE
SOD-123
Pb Free Produc
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board
Applications
space.
Low power loss, high efficiency.
Low current rectification
forward voltage drop.
High current capability, low
High surge
Features
capability.
Guardring for overvoltage protection.
Extremelysmall surface mounting type. (SOD-923)
Ultra high-speed switching.
Low
V
F
epitaxial planar chip, metal silicon junction.
Silicon
High reliability.
meet environmental standards of
Lead-free parts
We
MIL-STD-19500 /228
declare that the material of product
packing code suffix "G"
RoHS product for
RoHS requirements.
compliance with
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
FM120-M
THRU
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
0.071(1.8)
0.056(1.4)
Pb-Free package is available
Mechanical data
RoHS product for packing code suffix ”G”
Epoxy : UL94-V0 rated flame retardant
Halogen free product for packing code suffix “H”
Case : Molded plastic, SOD-123H
Method 2026
SOD-923
0.040(1.0)
0.024(0.6)
Terminals :Plated terminals, solderable per MIL-STD-750
,
0.031(0.8) Typ.
0.031(0.8) Typ.
Silicon epitaxial planar
Mounting Position : Any
Device
Construction
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
1
Cathode
2
Anode
DEVICE MARKING AND ORDERING INFORMATION
Weight : Approximated 0.011 gram
8000/Tape&Reel
SCS521CS-30T5G
F
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Absolute maximum ratings
(Ta=25°C)
For capacitive load,
Parameter
by 20%
derate current
Limits
Symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking
Shipping
 
Unit
V
R
Reverse voltage (DC)
30
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH
RATINGS
Average
Io
mA
Marking Code
rectifierd forward current
12
13
100
14
15
16
I
FSM
Forward current surge peak (60Hz・1cyc)
V
RRM
500
40
mA
20
30
50
60
Maximum Recurrent Peak Reverse Voltage
125
28
Junction temperature
Tj
42
14
21
35
Maximum RMS Voltage
V
RMS
Storage temperature
-40 to +125
Tstg
60
Maximum DC Blocking Voltage
20
30
40
50
V
DC
I
O
 
I
FSM
Maximum Average Forward Rectified Current
Peak
Electrical characteristic
(Ta=25°C)
sine-wave
Forward Surge Current 8.3 ms single half
superimposed on rated load (JEDEC method)
Parameter
Symbol
FM180-MH FM1100-MH FM1150-MH FM1200-MH
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
 
Typical Thermal Resistance (Note 2)
Forward vpltage
Typical Junction Capacitance (Note 1)
Forward vpltage
Operating Temperature Range
Storage Temperature Range
V
F
V
F
I
R
Min.
R
ΘJA
-
C
-
J
TSTG
Reverse current
-
T
J
Typ.
-
-
-
Max.
0.35
-55 to +125
 
0.4
 
Unit
V
V
µA
Conditions
I
F
=20mA
120
V
R
=10V
I
F
=10mA
40
1.0
 
30
 
 
 
-55 to +150
 
10
-
65
to +175
 
Electrical characteristic curves
(Ta=25
O
C)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Io
AVERAGE RECTIFI
FORWARD CURRENT:Io(A)
0.3
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.50
0.3
0A
0V
0.2
DC
D=1/2
0.1
Sin(θ=180)
0
0
25
50
75
0.70
Io
t
T
VR
D=t/T
VR=15V
Tj=125℃
0.85
0.5
10
0.9
0.92
 
Rated DC Blocking
 
0A
0V
Voltage
t
T
@T A=125℃
VR
D=t/T
VR=15V
Tj=125℃
I
R
NOTES:
0.2
DC
1- Measured at
D=1/2
and applied reverse voltage of 4.0 VDC.
1 MHZ
 
 
2- Thermal Resistance From Junction to Ambient
0.1
Sin(θ=180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
125
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
2012-06
WILLAS ELECTRONIC COR
2012-11
WILLAS ELECTRONIC CORP.